TJ8S06M3L
Produktnummer:
TJ8S06M3L
Hersteller:
Toshiba
Lagerbestand:
0
VPE:
1
Date Code:
2006+
Verpackung:
cut tape
Bauform:
DPAK
RoHs Status:
yes
| Anzahl | Stückpreis |
|---|---|
| Bis 500 |
0,35 €*
|
| Bis 750 |
0,30 €*
0,35 €*
(14.29% gespart)
|
| Ab 751 |
0,25 €*
0,35 €*
(28.57% gespart)
|
Nicht mehr verfügbar
Mindestbestellwert: 50,00 EUR
Produktinformationen "TJ8S06M3L"
Silicon P-Channel MOSFET (U-MOS), -60V / -8A / 80mOhm
- Mounting Style: SMD/SMT
- Package/Case: TO-252-3
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Vds - Drain-Source Breakdown Voltage: - 60 V
- Id - Continuous Drain Current: - 8 A
- Rds On - Drain-Source Resistance: 104 mOhms
- Height: 2.3 mm
- Length: 6.5 mm
- Pd - Power Dissipation: 27 W
blatt: TJ8S06M3L.pdf
- Mounting Style: SMD/SMT
- Package/Case: TO-252-3
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Vds - Drain-Source Breakdown Voltage: - 60 V
- Id - Continuous Drain Current: - 8 A
- Rds On - Drain-Source Resistance: 104 mOhms
- Height: 2.3 mm
- Length: 6.5 mm
- Pd - Power Dissipation: 27 W
blatt: TJ8S06M3L.pdf