SUD40N10-25-E3
Produktnummer:
11636
Hersteller:
Siliconix
Lagerbestand:
0
VPE:
1
Date Code:
2009+
Verpackung:
Tape & Reel
Bauform:
TO-252
RoHs Status:
yes
| Anzahl | Stückpreis |
|---|---|
| Bis 200 |
1,00 €*
|
| Ab 201 |
0,75 €*
1,00 €*
(25% gespart)
|
Nicht mehr verfügbar
Mindestbestellwert: 50,00 EUR
Produktinformationen "SUD40N10-25-E3"
N-Channel 100-V (D-S) 175 °C MOSFET
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 40 A
Rds On - Drain-Source Resistance: 25 mOhms
Vgs th - Gate-Source Threshold Voltage: 1 V
Vgs - Gate-Source Voltage: 10 V
Qg - Gate Charge: 40 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 136 W
Datenblatt: SUD40N10.pdf
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 40 A
Rds On - Drain-Source Resistance: 25 mOhms
Vgs th - Gate-Source Threshold Voltage: 1 V
Vgs - Gate-Source Voltage: 10 V
Qg - Gate Charge: 40 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 136 W
Datenblatt: SUD40N10.pdf