STW6NC90Z
Produktnummer:
14131
Hersteller:
ST-Microelectronics
Lagerbestand:
180
VPE:
30
Date Code:
2011+
Verpackung:
Tube
Bauform:
TO-247
RoHs Status:
yes
| Anzahl | Stückpreis |
|---|---|
| Bis 60 |
8,00 €*
|
| Bis 120 |
7,60 €*
8,00 €*
(5% gespart)
|
| Ab 121 |
7,00 €*
8,00 €*
(12.5% gespart)
|
Mindestbestellwert: 50,00 EUR
Produktinformationen "STW6NC90Z"
N-channel Zener-Protected PowerMESH]III MOSFET 900 V / 2.1 Ω / 5.2 A
VDS Drain-source Voltage (VGS = 0) = 900 V
VDGR Drain-gate Voltage (RGS = 20 kW) = 900 V
VGS Gate- source Voltage = +-25 V
ID Drain Current (continuos) at TC = 25C = 5.2 A
ID Drain Current (continuos) at TC = 100C = 3.3 A
IDM (1) Drain Current (pulsed) = 21 A
PTOT Total Dissipation at TC = 25C = 160 W
Derating Factor = 1.52 W/C
IGS Gate-source Current = 50 mA
VESD(G-S) Gate source ESD(HBM-C=100pF, R=15KW) = 4 KV
dv/dt Peak Diode Recovery voltage slope = 3 V/ns
Tstg Storage Temperature = –65 to 150 C
Datenblatt: STW6NC90Z.pdf
VDS Drain-source Voltage (VGS = 0) = 900 V
VDGR Drain-gate Voltage (RGS = 20 kW) = 900 V
VGS Gate- source Voltage = +-25 V
ID Drain Current (continuos) at TC = 25C = 5.2 A
ID Drain Current (continuos) at TC = 100C = 3.3 A
IDM (1) Drain Current (pulsed) = 21 A
PTOT Total Dissipation at TC = 25C = 160 W
Derating Factor = 1.52 W/C
IGS Gate-source Current = 50 mA
VESD(G-S) Gate source ESD(HBM-C=100pF, R=15KW) = 4 KV
dv/dt Peak Diode Recovery voltage slope = 3 V/ns
Tstg Storage Temperature = –65 to 150 C
Datenblatt: STW6NC90Z.pdf