SSM6N17FU
Produktnummer:
12734
Hersteller:
Toshiba
Lagerbestand:
6000
VPE:
3000
Date Code:
06+
Verpackung:
Tape & Reel
Bauform:
SC-70-6
RoHs Status:
yes
| Anzahl | Stückpreis |
|---|---|
| Bis 3000 |
0,10 €*
|
| Bis 6000 |
0,08 €*
0,10 €*
(20% gespart)
|
| Ab 6001 |
0,04 €*
0,10 €*
(60% gespart)
|
Mindestbestellwert: 50,00 EUR
Produktinformationen "SSM6N17FU"
Silicon N Channel MOSFET For High Speed Switching And
Analog Switch Applications
Transistor Polarity: N-Channel
Number of Channels: 2 Channel
Vds - Drain-Source Breakdown Voltage: 50 V
Id - Continuous Drain Current: 100 mA
Rds On - Drain-Source Resistance: 20 Ohms
Vgs - Gate-Source Voltage: - 7 V, + 7 V
Vgs th - Gate-Source Threshold Voltage: 900 mV
Pd - Power Dissipation: 200 mW
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Datenblatt: SSM6N17FU.pdf
Transistor Polarity: N-Channel
Number of Channels: 2 Channel
Vds - Drain-Source Breakdown Voltage: 50 V
Id - Continuous Drain Current: 100 mA
Rds On - Drain-Source Resistance: 20 Ohms
Vgs - Gate-Source Voltage: - 7 V, + 7 V
Vgs th - Gate-Source Threshold Voltage: 900 mV
Pd - Power Dissipation: 200 mW
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Datenblatt: SSM6N17FU.pdf