SPD03N50C3ATMA1
Produktnummer:
SPD03N50C3ATMA1
Hersteller:
Infineon
Lagerbestand:
2500
VPE:
2500
Date Code:
22+
Verpackung:
T&R
Bauform:
TO-252-3
RoHs Status:
yes
| Anzahl | Stückpreis |
|---|---|
| Bis 250 |
1,00 €*
|
| Bis 500 |
0,96 €*
1,00 €*
(4% gespart)
|
| Bis 1000 |
0,90 €*
1,00 €*
(10% gespart)
|
| Bis 2500 |
0,84 €*
1,00 €*
(16% gespart)
|
| Ab 2501 |
0,75 €*
1,00 €*
(25% gespart)
|
Mindestbestellwert: 50,00 EUR
Produktinformationen "SPD03N50C3ATMA1"
MOSFET N-CH 500V 3.2A
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 500 V
Id - Continuous Drain Current: 3.2 A
Rds On - Drain-Source Resistance: 1.4 Ohms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 3.9 V
Qg - Gate Charge: 15 nC
Pd - Power Dissipation: 38 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Datenblatt: SPD03N50C3.pdf
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 500 V
Id - Continuous Drain Current: 3.2 A
Rds On - Drain-Source Resistance: 1.4 Ohms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 3.9 V
Qg - Gate Charge: 15 nC
Pd - Power Dissipation: 38 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Datenblatt: SPD03N50C3.pdf