SI2304BDS-T1-E3
Produktnummer:
SI2304BDS-T1-E3-1737720354
Hersteller:
Vishay
Lagerbestand:
12000
VPE:
3000
Date Code:
22+
Verpackung:
T&R
Bauform:
SOT-23
RoHs Status:
yes
| Anzahl | Stückpreis |
|---|---|
| Bis 3000 |
0,12 €*
|
| Bis 6000 |
0,11 €*
0,12 €*
(8.33% gespart)
|
| Bis 12000 |
0,09 €*
0,12 €*
(25% gespart)
|
| Ab 12001 |
0,07 €*
0,12 €*
(41.67% gespart)
|
Mindestbestellwert: 50,00 EUR
Produktinformationen "SI2304BDS-T1-E3"
MOSFET N-Channel
Technology: Si
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Id - Continuous Drain Current: 2.6 A
Rds On - Drain-Source Resistance: 70 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 3 V
Qg - Gate Charge: 2.6 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Datenblatt: SI2304BDS.pdf
Technology: Si
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Id - Continuous Drain Current: 2.6 A
Rds On - Drain-Source Resistance: 70 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 3 V
Qg - Gate Charge: 2.6 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Datenblatt: SI2304BDS.pdf