SI2303BDS-T1-E3
Produktnummer:
12733
Hersteller:
Vishay
Lagerbestand:
4224
VPE:
3000
Date Code:
07+
Verpackung:
Tape & Reel
Bauform:
SOT-23
RoHs Status:
yes
| Anzahl | Stückpreis |
|---|---|
| Bis 1000 |
0,50 €*
|
| Bis 2000 |
0,46 €*
0,50 €*
(8% gespart)
|
| Bis 3000 |
0,38 €*
0,50 €*
(24% gespart)
|
| Ab 3001 |
0,32 €*
0,50 €*
(36% gespart)
|
Mindestbestellwert: 50,00 EUR
Produktinformationen "SI2303BDS-T1-E3"
Single P-Channel, MOSFET
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Id - Continuous Drain Current: 2.6 A
Rds On - Drain-Source Resistance: 70 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 1.5 V
Qg - Gate Charge: 2.6 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Datenblatt: SI2303BDS.pdf
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Id - Continuous Drain Current: 2.6 A
Rds On - Drain-Source Resistance: 70 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 1.5 V
Qg - Gate Charge: 2.6 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Datenblatt: SI2303BDS.pdf