SI2302ADS-T1-E3
Produktnummer:
10182
Hersteller:
Vishay
Lagerbestand:
1500
VPE:
1
Date Code:
2006+
Verpackung:
cut tape
Bauform:
SOT-23-3
RoHs Status:
yes
| Anzahl | Stückpreis |
|---|---|
| Bis 500 |
0,25 €*
|
| Bis 1000 |
0,20 €*
0,25 €*
(20% gespart)
|
| Ab 1001 |
0,17 €*
0,25 €*
(32% gespart)
|
Mindestbestellwert: 50,00 EUR
Produktinformationen "SI2302ADS-T1-E3"
N-Channel 1.25-W, 2.5-V MOSFET
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) : 2.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
Vgs(th) (Max): 1.2V
Gate Charge (Qg) (Max): 10nC
Vgs (Max) : +-8V
Input Capacitance (Ciss) (Max): 300pF
Power Dissipation (Max): 700mW
Rds On (Max): 60 mOhm
Operating Temperature: -55°C ... 150°C
Datenblatt: SI2302ADS.pdf
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) : 2.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
Vgs(th) (Max): 1.2V
Gate Charge (Qg) (Max): 10nC
Vgs (Max) : +-8V
Input Capacitance (Ciss) (Max): 300pF
Power Dissipation (Max): 700mW
Rds On (Max): 60 mOhm
Operating Temperature: -55°C ... 150°C
Datenblatt: SI2302ADS.pdf