SI1912EDH-T1-E3
Produktnummer:
12613
Hersteller:
Vishay
Lagerbestand:
2000
VPE:
1
Date Code:
2006+
Verpackung:
cut tape
Bauform:
SC70-6
RoHs Status:
yes
| Anzahl | Stückpreis |
|---|---|
| Bis 500 |
0,25 €*
|
| Bis 1000 |
0,20 €*
0,25 €*
(20% gespart)
|
| Bis 2000 |
0,18 €*
0,25 €*
(28% gespart)
|
| Ab 2001 |
0,15 €*
0,25 €*
(40% gespart)
|
Mindestbestellwert: 50,00 EUR
Produktinformationen "SI1912EDH-T1-E3"
Dual N-Channel 20 V (D-S) MOSFET
FET Type: Dual N-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Continuous Drain Current (Id): 1.13A
Rds On (Max): 280 mOhm
Vgs(th) (Max): 450mV
Gate Charge (Qg): 1nC
Max Power: 570mW
Operating Temperature: -55°C / 150°C
Datenblatt: SI1912EDH.pdf
FET Type: Dual N-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Continuous Drain Current (Id): 1.13A
Rds On (Max): 280 mOhm
Vgs(th) (Max): 450mV
Gate Charge (Qg): 1nC
Max Power: 570mW
Operating Temperature: -55°C / 150°C
Datenblatt: SI1912EDH.pdf