SD56120
Produktnummer:
SD56120
Hersteller:
ST-Microelectronics
Lagerbestand:
0
VPE:
20
Date Code:
16+
Verpackung:
tray
Bauform:
M246
RoHs Status:
yes
| Anzahl | Stückpreis |
|---|---|
| Bis 20 |
156,00 €*
|
| Bis 40 |
152,00 €*
156,00 €*
(2.56% gespart)
|
| Bis 60 |
151,00 €*
156,00 €*
(3.21% gespart)
|
| Ab 61 |
150,00 €*
156,00 €*
(3.85% gespart)
|
Nicht mehr verfügbar
Mindestbestellwert: 50,00 EUR
Produktinformationen "SD56120"
RF MOSFET Transistors
Transistor Polarity: N-Channel
Technology: Si
Id - Continuous Drain Current: 14 A
Vds - Drain-Source Breakdown Voltage: 65 V
Operating Frequency: 1 GHz
Gain: 14 dB
Output Power: 100 W
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 150 C
Datenblatt: SD56120.pdf
Transistor Polarity: N-Channel
Technology: Si
Id - Continuous Drain Current: 14 A
Vds - Drain-Source Breakdown Voltage: 65 V
Operating Frequency: 1 GHz
Gain: 14 dB
Output Power: 100 W
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 150 C
Datenblatt: SD56120.pdf