Zum Hauptinhalt springen Zur Suche springen Zur Hauptnavigation springen

RFP22N10

Produktinformationen "RFP22N10"

N-Channel Power Mosfets 22A / 100V / 0,08 Ohm

Drain to Source Voltage Vdss = 100V
Drain to Gate Voltage Vdgr = 100V
Gate to Source Voltage Vgs = +-20V
Continuous Drain Current Id = 22A
Pulsed Drain Current Idm = 50A
Maximum Power Dissipation = Pd = 100W
Operating and Storage Temperature Tj = -55°C - 175°C
Drain to Source On Resistance Rdson = 0.80 Ohm

Datenblatt: RFP22N10.pdf