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P0120009P

Produktinformationen "P0120009P"

2W GaAs Power FET

- Up to 2.7 GHz frequency band
- Beyond +31 dBm output power
- Up to +48dBm Output IP3
- High Drain Efficiency
- 11dB Gain at 2.1GHz
- SOT-89 SMT Package
- Low Noise Figure

Applications
- Wireless communication system
- Cellular, PCS, PHS, W-CDMA, WLAN

Datenblatt: P0120009P.pdf