MTD10N10EL
Produktnummer:
12471
Hersteller:
ON-Semiconductor
Lagerbestand:
0
VPE:
75
Date Code:
04+
Verpackung:
Tube
Bauform:
DPAK
RoHs Status:
no
| Anzahl | Stückpreis |
|---|---|
| Bis 500 |
0,30 €*
|
| Bis 750 |
0,26 €*
0,30 €*
(13.33% gespart)
|
| Ab 751 |
0,20 €*
0,30 €*
(33.33% gespart)
|
Nicht mehr verfügbar
Mindestbestellwert: 50,00 EUR
Produktinformationen "MTD10N10EL"
MOS E−FET™ Power Field Effect Transistor 100V / 10A / 0.22Ohm
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id): 10A (Tc)
Drive Voltage: 5V
Rds On: 220mOhm
Vgs(th) (Max): 2V
Gate Charge: 15nC at 5V
Vgs (Max): ±15V
Input Capacitance: 1040pF at 25V
Power Dissipation (Max): 1.75W (Ta), 40W (Tc)
Operating Temperature: -55°C - 150°C (TJ)
Datenblatt: MTD10N10EL.pdf
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id): 10A (Tc)
Drive Voltage: 5V
Rds On: 220mOhm
Vgs(th) (Max): 2V
Gate Charge: 15nC at 5V
Vgs (Max): ±15V
Input Capacitance: 1040pF at 25V
Power Dissipation (Max): 1.75W (Ta), 40W (Tc)
Operating Temperature: -55°C - 150°C (TJ)
Datenblatt: MTD10N10EL.pdf