IRF7492PBF
Produktnummer:
14643
Hersteller:
International Rectifier
Lagerbestand:
16
VPE:
1
Date Code:
2010+
Verpackung:
Tube
Bauform:
SOIC-8
RoHs Status:
yes
| Anzahl | Stückpreis |
|---|---|
| Bis 100 |
0,60 €*
|
| Ab 101 |
0,50 €*
0,60 €*
(16.67% gespart)
|
Mindestbestellwert: 50,00 EUR
Produktinformationen "IRF7492PBF"
N-Channel HEXFET Power MOSFET 200V / 3.7A / 79mOhm
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id): 3.7A
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max): 79mOhm
Vgs(th) (Max): 2.5V
Gate Charge (Qg) (Max): 59nC
Vgs (Max): +-20V
Input Capacitance (Ciss) (Max): 1820pF
Power Dissipation (Max): 2.5W (Ta)
Operating Temperature: -55C to 150C
Datenblatt: IRF7492.pdf
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id): 3.7A
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max): 79mOhm
Vgs(th) (Max): 2.5V
Gate Charge (Qg) (Max): 59nC
Vgs (Max): +-20V
Input Capacitance (Ciss) (Max): 1820pF
Power Dissipation (Max): 2.5W (Ta)
Operating Temperature: -55C to 150C
Datenblatt: IRF7492.pdf