IPB80N06S2L-11
Produktnummer:
14358
Hersteller:
Infineon
Lagerbestand:
1200
VPE:
1
Date Code:
07+
Verpackung:
cut tape
Bauform:
PG-TO263-3-2
RoHs Status:
yes
| Anzahl | Stückpreis |
|---|---|
| Bis 500 |
1,35 €*
|
| Bis 1000 |
1,28 €*
1,35 €*
(5.19% gespart)
|
| Ab 1001 |
1,22 €*
1,35 €*
(9.63% gespart)
|
Mindestbestellwert: 50,00 EUR
Produktinformationen "IPB80N06S2L-11"
OptiMos N-Channel Power Transistor 55V/80A/10.7mOhm
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 55 V
Id - Continuous Drain Current: 80 A
Rds On - Drain-Source Resistance: 10.7 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 1.6 V
Qg - Gate Charge: 80 nC
Pd - Power Dissipation: 158 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Datenblatt: IPB80N06S2L-11.pdf
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 55 V
Id - Continuous Drain Current: 80 A
Rds On - Drain-Source Resistance: 10.7 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 1.6 V
Qg - Gate Charge: 80 nC
Pd - Power Dissipation: 158 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Datenblatt: IPB80N06S2L-11.pdf