IPB80N06S2-05
Produktnummer:
14440
Hersteller:
Infineon
Lagerbestand:
0
VPE:
1
Date Code:
2012+
Verpackung:
cut tape
Bauform:
PG-TO263-3-2
RoHs Status:
yes
| Anzahl | Stückpreis |
|---|---|
| Bis 100 |
1,25 €*
|
| Bis 200 |
1,15 €*
1,25 €*
(8% gespart)
|
| Ab 201 |
1,00 €*
1,25 €*
(20% gespart)
|
Nicht mehr verfügbar
Mindestbestellwert: 50,00 EUR
Produktinformationen "IPB80N06S2-05"
OptiMos N-Channel Power Transistor 55V/80A/4.8mOhm
- N-channel - Enhancement mode
- Automotive AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green package (lead free)
- Ultra low Rds(on)
- 100% Avalanche tested
- Vds - Drain-Source Breakdown Voltage: 55 V
- Id - Continuous Drain Current: 80 A
- Rds On - Drain-Source Resistance: 4.8 mOhms
- Vgs - Gate-Source Voltage: 20 V
- Minimum Operating Temperature: - 55 C
- Maximum Operating Temperature: + 175 C
- Configuration: Single
- Pd - Power Dissipation: 300 W
IPB80N06S2-05.pdf
- N-channel - Enhancement mode
- Automotive AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green package (lead free)
- Ultra low Rds(on)
- 100% Avalanche tested
- Vds - Drain-Source Breakdown Voltage: 55 V
- Id - Continuous Drain Current: 80 A
- Rds On - Drain-Source Resistance: 4.8 mOhms
- Vgs - Gate-Source Voltage: 20 V
- Minimum Operating Temperature: - 55 C
- Maximum Operating Temperature: + 175 C
- Configuration: Single
- Pd - Power Dissipation: 300 W
IPB80N06S2-05.pdf