IPB037N06N3GATMA1
Produktnummer:
IPB037N06N3GATMA1
Hersteller:
Infineon
Lagerbestand:
2000
VPE:
1000
Date Code:
22+
Verpackung:
T&R
Bauform:
D2PAK
RoHs Status:
yes
| Anzahl | Stückpreis |
|---|---|
| Bis 1000 |
1,25 €*
|
| Bis 2000 |
1,16 €*
1,25 €*
(7.2% gespart)
|
| Ab 2001 |
1,03 €*
1,25 €*
(17.6% gespart)
|
Mindestbestellwert: 50,00 EUR
Produktinformationen "IPB037N06N3GATMA1"
N-Channel MOSFET
Technology: Si
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 60 V
Id - Continuous Drain Current: 90 A
Rds On - Drain-Source Resistance: 3 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 98 nC
Pd - Power Dissipation: 188 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Datenblatt: IPB037N06N3G.pdf
Technology: Si
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 60 V
Id - Continuous Drain Current: 90 A
Rds On - Drain-Source Resistance: 3 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 98 nC
Pd - Power Dissipation: 188 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Datenblatt: IPB037N06N3G.pdf