IPB019N08N3 G
Produktnummer:
12810
Hersteller:
Infineon
Lagerbestand:
0
VPE:
1
Date Code:
2010+
Verpackung:
Tape & Reel
Bauform:
PG-TO263-7
RoHs Status:
yes
| Anzahl | Stückpreis |
|---|---|
| Bis 500 |
2,00 €*
|
| Bis 1000 |
1,75 €*
2,00 €*
(12.5% gespart)
|
| Ab 1001 |
1,50 €*
2,00 €*
(25% gespart)
|
Nicht mehr verfügbar
Mindestbestellwert: 50,00 EUR
Produktinformationen "IPB019N08N3 G"
N-Channel OptiMOS (TM) 3 Power Transistor 80V / 180A / 1.9mOhm
- Optimized technology for DC-DC converters
- Excellent gate charge x R DS(ON) product (FOM)
- Superior thermal resistance
- Dual sided cooling
- Low parasitic inductance
- Low profile (<0,7mm)
- N-channel, normal level
- Pb-free plating; RoHS compliant
Datenblatt: IPB019N08N3G.pdf
- Optimized technology for DC-DC converters
- Excellent gate charge x R DS(ON) product (FOM)
- Superior thermal resistance
- Dual sided cooling
- Low parasitic inductance
- Low profile (<0,7mm)
- N-channel, normal level
- Pb-free plating; RoHS compliant
Datenblatt: IPB019N08N3G.pdf