IKW30N60H3
Produktnummer:
13796
Hersteller:
Infineon
Lagerbestand:
300
VPE:
30
Date Code:
11+
Verpackung:
Tube
Bauform:
TO-247
RoHs Status:
yes
| Anzahl | Stückpreis |
|---|---|
| Bis 100 |
1,65 €*
|
| Bis 300 |
1,60 €*
1,65 €*
(3.03% gespart)
|
| Ab 301 |
1,52 €*
1,65 €*
(7.88% gespart)
|
Mindestbestellwert: 50,00 EUR
Produktinformationen "IKW30N60H3"
High Speed DuoPack: IGBT In Trench And Fieldstop Technology With Soft, Fast Recovery Anti-Parallel Diode 600V / 30A
Configuration: Single
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 1.95 V
Maximum Gate Emitter Voltage: - 20 V, + 20 V
Continuous Collector Current at 25 C: 60 A
Pd - Power Dissipation: 187 W
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 175 C
Datenblatt: IKW30N60H3.pdf
Configuration: Single
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 1.95 V
Maximum Gate Emitter Voltage: - 20 V, + 20 V
Continuous Collector Current at 25 C: 60 A
Pd - Power Dissipation: 187 W
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 175 C
Datenblatt: IKW30N60H3.pdf