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FS10KM-10

Produktinformationen "FS10KM-10"

N-channel Power MOSFET 500V / 10A

Drain-source voltage VDSS: 500V
Gate-source voltage VGSS: +-30V
Drain current Id: 10A
Drain current (Pulsed) Idm: 30A
Maximum power dissipation Pd: 35W
Channel temperature Tch: -55 to +150C
Storage temperature Tstg: -55 to +150C

Datenblatt: FS10KM-10.pdf