FDN337N
Produktnummer:
11679
Hersteller:
ON-Semiconductor
Lagerbestand:
2945
VPE:
1
Date Code:
17+
Verpackung:
Tape & Reel
Bauform:
SOT-23
RoHs Status:
yes
| Anzahl | Stückpreis |
|---|---|
| Bis 500 |
0,40 €*
|
| Bis 1000 |
0,38 €*
0,40 €*
(5% gespart)
|
| Bis 3000 |
0,35 €*
0,40 €*
(12.5% gespart)
|
| Ab 3001 |
0,25 €*
0,40 €*
(37.5% gespart)
|
Mindestbestellwert: 50,00 EUR
Produktinformationen "FDN337N"
N-Channel MOSFET
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Id - Continuous Drain Current: 2.2 A
Rds On - Drain-Source Resistance: 65 mOhms
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage: 400 mV
Qg - Gate Charge: 9 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 500 mW
Datenblatt: FDN337N.pdf
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Id - Continuous Drain Current: 2.2 A
Rds On - Drain-Source Resistance: 65 mOhms
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage: 400 mV
Qg - Gate Charge: 9 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 500 mW
Datenblatt: FDN337N.pdf