FDBL0260N100
Produktnummer:
13199
Hersteller:
ON-Semiconductor
Lagerbestand:
24000
VPE:
2000
Date Code:
18+
Verpackung:
Tape & Reel
Bauform:
TO-LL8-8
RoHs Status:
yes
| Anzahl | Stückpreis |
|---|---|
| Bis 2000 |
3,19 €*
|
| Bis 4000 |
3,05 €*
3,19 €*
(4.39% gespart)
|
| Bis 8000 |
2,91 €*
3,19 €*
(8.78% gespart)
|
| Bis 16000 |
2,80 €*
3,19 €*
(12.23% gespart)
|
| Ab 16001 |
2,64 €*
3,19 €*
(17.24% gespart)
|
Mindestbestellwert: 50,00 EUR
Produktinformationen "FDBL0260N100"
MOSFET N-Channel Power Trench
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 200 A
Rds On - Drain-Source Resistance: 2.6 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 83 nC
Pd - Power Dissipation: 250 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Datenblatt: FDBL0260N100.pdf
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 200 A
Rds On - Drain-Source Resistance: 2.6 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 83 nC
Pd - Power Dissipation: 250 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Datenblatt: FDBL0260N100.pdf