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BF599

Produktinformationen "BF599"

NPN Silicon RF Transistor 25V / 25mA

Collector-emitter voltage VCE0: 25V
Collector-base voltage VCB0: 40V
Emitter-base voltage VEB0: 4V
Collector current IC: 25mA
Base current IB: 5mA
Total power dissipation, TA £ 25 °C Ptot: 280 mW
Junction temperature Tj: 150 °C
Transition frequency ft: 550MHz

Datenblatt: BF599.pdf