V...

Siliconix

VN10LE

Beschreibung: N-Channel Enhancement-Mode MOSFET Transistors 60V / 5 Ohm / 380mA Datenblatt: VN10LE.pdf

€ 60 .00*

Diodes Inc.

VN10LP

N-Channel DMOSFET 60V / 5 Ohm / 270mA Number of Channels: 1 Channel Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Id - Continuous Drain Current: 270 mA Rds On - Drain-Source Resistance: 5 Ohms Vgs th - Gate-Source Threshold Voltage: 800 mV Vgs - Gate-Source Voltage: 10 V Pd - Power Dissipation: 625 mW Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Datenblatt: VN10LP.pdf

€ 0 .71*

ST-Microelectronics

VNS1NV0413TR

"OMNIFET II": Fully Autoprotected Power MOSFET 40V / 1.7A / 250mOhm Number of Outputs: 1 Output Output Current: 1.7 A Voltage - Load: 36V (Max) Operating Supply Current: 100 uA Pd - Power Dissipation: 8.3 W Operating Temperature TJ: -40C to 150C Datenblatt: VNS1NV04.pdf

€ 1 .04*

Siliconix

VP0610L

P-Channel 60-V (D-S) MOSFET Datenblatt: VP0610L.pdf

€ 1 .25*

Siliconix

VP0808L

P-Channel Enhancement-Mode MOSFET Transistor Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 80 V Id - Continuous Drain Current: 280 mA Rds On - Drain-Source Resistance: 5 Ohms Vgs - Gate-Source Voltage: - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage: 1 V Pd - Power Dissipation: 1 W Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Datenblatt: VP0808L.pdf

€ 1 .00*

Siliconix

VP0808M

P-Channel Enhancement-Mode MOSFET Transistor Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 80 V Id - Continuous Drain Current: 310 mA Rds On - Drain-Source Resistance: 2.5 Ohms Vgs - Gate-Source Voltage: - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage: 1 V Pd - Power Dissipation: 1 W Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Datenblatt: VP0808L.pdf

€ 0 .80*