TS...
Taiwan Semiconductor Co.,Ltd.
TS13003CK B0
High Voltage NPN Transistor
Collector-Base Voltage Vcbo: 700V
Collector-Emitter Voltage Vceo: 400V
Emitter-Base Voltage Vebo: 9V
Collector Current Ic: 1.5A
Total Power Dissipation Ptot: 1.5W
Datenblatt:
TS13003.pdf
€
0
.38*
Taiwan Semiconductor Co.,Ltd.
TSM2301CX RFG
20V P-Channel MOSFET
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 20 V
Id - Continuous Drain Current: 2.8 A
Rds On - Drain-Source Resistance: 85 mOhms
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage: 450 mV
Qg - Gate Charge: 5.4 nC
Pd - Power Dissipation: 900 mW
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
€
0
.12*
Taiwan Semiconductor Co.,Ltd.
TSM25N03CP RO
25V N-Channel MOSFET
Continuous Drain Current: 25(A)
Power Dissipation: 60(W)
Operating Temperature Classification: Military
Operating Temp Range: -55C to 150C
Polarity: N-Channel
Channel Mode: Enhancement
Gate-Source Voltage (Max): +-20(V)
Drain-Source On-Volt: 25(V)
€
0
.31*