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Siliconix
TP0205A-T1
Beschreibung: P-Channel 20-V (D-S) MOSFET, Low-Threshold Datenblatt: TP0205A.pdf

Ab
0 .25*
Supertex Inc.
TP0604N3
Beschreibung: P-Channel Enhancement-Mode Vertical DMOS FET -40V / -2A / 2,0 Ohm Datenblatt: TP0604.pdf

Ab
0 .28*
Supertex Inc.
TP2104K1
P-Channel Enhancement-Mode Vertical DMOS FET -40V / -160mA / 6.0 Ohm Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 40 V Id - Continuous Drain Current: 160 mA Rds On - Drain-Source Resistance: 6 Ohms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 1 V Pd - Power Dissipation: 360 mW Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Datenblatt: TP2104K1.pdf

Ab
0 .15*
Motorola
TP9383A
RF Bipolar Transistors Transistor Type: Bipolar Power Technology: Si Transistor Polarity: NPN Operating Frequency: 108 MHz Frequency Min: 88 MHz Frequency Max: 108 MHz DC Collector/Base Gain hFE Min: 20 Collector- Emitter Voltage VCEO Max: 25 V Emitter- Base Voltage VEBO: 4 V Continuous Collector Current: 16 A Gain: 9.2 dB Pd - Power Dissipation: 150 W Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 200 C Mounting Style: Screw Mount

Ab
55 .00*
Toshiba
TPCP8303.LF
P-Channel MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.8A Power dissipation: 1.48W Gate-source voltage: +-8V On-state resistance: 41mOhm Gate charge: 10nC Datenblatt: TPCP8303.pdf

Ab
0 .65*