RF Bipolar Transistors
Transistor Type: Bipolar Power
Technology: Si
Transistor Polarity: NPN
Operating Frequency: 108 MHz
Frequency Min: 88 MHz
Frequency Max: 108 MHz
DC Collector/Base Gain hFE Min: 20
Collector- Emitter Voltage VCEO Max: 25 V
Emitter- Base Voltage VEBO: 4 V
Continuous Collector Current: 16 A
Gain: 9.2 dB
Pd - Power Dissipation: 150 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 200 C
Mounting Style: Screw Mount