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ON-Semiconductor

TIP122G

NPN Darlington Transistors Configuration: Single Transistor Polarity: NPN Collector- Emitter Voltage VCEO Max: 80 V Emitter- Base Voltage VEBO: 5 V Collector- Base Voltage VCBO: 80 V Maximum DC Collector Current: 5 A Maximum Collector Cut-off Current: 200 uA Pd - Power Dissipation: 65 W Mounting Style: Through Hole Minimum Operating Temperature: - 65 C Maximum Operating Temperature: + 150 C Datenblatt: TIP122G.pdf

€ 0 .50*

ST-Microelectronics

TIP147

PNP Silicon Epitaxial-Base NPN Power Transistors -100V / -10A Datenblatt: TIP147.pdf

€ 1 .00*

Fairchild

TIP41C

NPN Epitaxial Silicon Transistor for Medium Power Linear Switching Applications 100V / 6A Configuration: Single Collector- Emitter Voltage VCEO Max: 100 V Collector- Base Voltage VCBO: 100 V Emitter- Base Voltage VEBO: 5 V Collector-Emitter Saturation Voltage: 1.5 V Maximum DC Collector Current: 6 A Pd - Power Dissipation: 65 W Minimum Operating Temperature: - 65 C Maximum Operating Temperature: + 150 C Datenblatt: TIP41.pdf

€ 0 .25*

Fairchild

TIP42C

Beschreibung: PNP Epitaxial Silicon Transistor for Medium Power Linear Switching Applications -100V / -6A Datenblatt: TIP42.pdf

€ 0 .10*

Toshiba

TJ8S06M3L

Silicon P-Channel MOSFET (U-MOS), -60V / -8A / 80mOhm - Mounting Style: SMD/SMT - Package/Case: TO-252-3 - Number of Channels: 1 Channel - Transistor Polarity: P-Channel - Vds - Drain-Source Breakdown Voltage: - 60 V - Id - Continuous Drain Current: - 8 A - Rds On - Drain-Source Resistance: 104 mOhms - Height: 2.3 mm - Length: 6.5 mm - Pd - Power Dissipation: 27 W blatt: TJ8S06M3L.pdf

€ 0 .25*

Toshiba

TK12J60U(F)

Beschreibung: N-Channel Power MOSFET 600V / 12A / 0.36Ohm Datenblatt: TK12J60UF.pdf

€ 2 .75*

Siliconix

TN0205A-T1

Beschreibung: N-Channel 20-V MOSFET Datenblatt: TN0205A.pdf

€ 0 .25*

Supertex Inc.

TN0602N3

Beschreibung: N-Channel Enhancement-Mode Vertical DMOS FETs 20V / 4A / 0.75 Ohm Datenblatt: TN0602.pdf

€ 0 .40*

Supertex Inc.

TN0606N3-G

N-Channel Enhancement-Mode Vertical DMOS FETs 60V / 3A / 1,5 Ohm Datenblatt: TN0606.pdf

€ 0 .66*

Siliconix

TP0205A-T1

Beschreibung: P-Channel 20-V (D-S) MOSFET, Low-Threshold Datenblatt: TP0205A.pdf

€ 0 .25*

Supertex Inc.

TP0604N3

Beschreibung: P-Channel Enhancement-Mode Vertical DMOS FET -40V / -2A / 2,0 Ohm Datenblatt: TP0604.pdf

€ 0 .28*

Supertex Inc.

TP2104K1

P-Channel Enhancement-Mode Vertical DMOS FET -40V / -160mA / 6.0 Ohm Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 40 V Id - Continuous Drain Current: 160 mA Rds On - Drain-Source Resistance: 6 Ohms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 1 V Pd - Power Dissipation: 360 mW Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Datenblatt: TP2104K1.pdf

€ 0 .15*

Motorola

TP9383A

RF Bipolar Transistors Transistor Type: Bipolar Power Technology: Si Transistor Polarity: NPN Operating Frequency: 108 MHz Frequency Min: 88 MHz Frequency Max: 108 MHz DC Collector/Base Gain hFE Min: 20 Collector- Emitter Voltage VCEO Max: 25 V Emitter- Base Voltage VEBO: 4 V Continuous Collector Current: 16 A Gain: 9.2 dB Pd - Power Dissipation: 150 W Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 200 C Mounting Style: Screw Mount

€ 55 .00*

Toshiba

TPCP8303.LF

P-Channel MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.8A Power dissipation: 1.48W Gate-source voltage: +-8V On-state resistance: 41mOhm Gate charge: 10nC Datenblatt: TPCP8303.pdf

€ 0 .65*

Taiwan Semiconductor Co.,Ltd.

TS13003CK B0

High Voltage NPN Transistor Collector-Base Voltage Vcbo: 700V Collector-Emitter Voltage Vceo: 400V Emitter-Base Voltage Vebo: 9V Collector Current Ic: 1.5A Total Power Dissipation Ptot: 1.5W Datenblatt: TS13003.pdf

€ 0 .38*

Taiwan Semiconductor Co.,Ltd.

TSM2301CX RFG

20V P-Channel MOSFET Transistor Polarity: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 2.8 A Rds On - Drain-Source Resistance: 85 mOhms Vgs - Gate-Source Voltage: - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage: 450 mV Qg - Gate Charge: 5.4 nC Pd - Power Dissipation: 900 mW Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C

€ 0 .12*

Taiwan Semiconductor Co.,Ltd.

TSM25N03CP RO

25V N-Channel MOSFET Continuous Drain Current: 25(A) Power Dissipation: 60(W) Operating Temperature Classification: Military Operating Temp Range: -55C to 150C Polarity: N-Channel Channel Mode: Enhancement Gate-Source Voltage (Max): +-20(V) Drain-Source On-Volt: 25(V)

€ 0 .31*