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ST-Microelectronics

STB60NE03L-12

Beschreibung: N-channel Power MOSFET 30 V / 0.009 Ω / 60 A Datenblatt: STB60NE03L12.pdf

€ 0 .50*

ST-Microelectronics

STB80NF03L-04T4

Beschreibung: N-Channel 30V - 0.0035Ohm - 80A - D2PAK STripFET (TM) II POWER MOSFET Datenblatt: STB80NF03L.pdf

€ 0 .80*

ST-Microelectronics

STD25NF10LT4

N-Channel MOSFET Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 100 V Id - Continuous Drain Current: 25 A Rds On - Drain-Source Resistance: 30 mOhms Vgs - Gate-Source Voltage: - 16 V, + 16 V Vgs th - Gate-Source Threshold Voltage: 1 V Qg - Gate Charge: 52 nC Pd - Power Dissipation: 100 W Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 175 C

€ 1 .04*

ST-Microelectronics

STD5NK50ZT4

MOSFET N-Ch 500 Volt 4.4 A Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 500 V Id - Continuous Drain Current: 4.4 A Rds On - Drain-Source Resistance: 1.5 Ohms Vgs - Gate-Source Voltage: - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage: 4.5 V Qg - Gate Charge: 20 nC Pd - Power Dissipation: 70 W Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Datenblatt: STD5NK50ZT4.pdf

€ 0 .30*

ST-Microelectronics

STE53NC50

Beschreibung: N-CHANNEL 500V - 0.070W - 53A ISOTOP PowerMesh™II MOSFET Datenblatt: STE53NC50.pdf

€ 17 .50*

ST-Microelectronics

STF24N60M2

Beschreibung: N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus™ low Qg Power MOSFETs Datenblatt: STF24N60M2.pdf

€ 2 .00*

ST-Microelectronics

STH80NF55-08

Beschreibung: N-channel Power MOSFET 55 V / 0.0065 Ohm / 80 A

€ 7 .00*

ST-Microelectronics

STP13NM60N

Beschreibung: N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET Datenblatt: STP13NM60N.pdf

€ 1 .75*

ST-Microelectronics

STP140NF55

N-Channel MOSFET 55V / 80A / 0.0065Ohm Number of Channels: 1 Channel Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Id - Continuous Drain Current: 80 A Rds On - Drain-Source Resistance: 8 mOhms Vgs - Gate-Source Voltage: 20 V Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 300 W Datenblatt: STP140NF55.pdf

€ 1 .28*

ST-Microelectronics

STP14NF10

N-channel MOSFET 100 V / 0.115 Ohm / 15 A Number of Channels: 1 Channel Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Id - Continuous Drain Current: 15 A Rds On - Drain-Source Resistance: 130 mOhms Vgs th - Gate-Source Threshold Voltage: 2 V Vgs - Gate-Source Voltage: 10 V Qg - Gate Charge: 15.5 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 60 W Datenblatt: STP14NF10.pdf

€ 0 .80*

ST-Microelectronics

STP55NF06

Beschreibung: N-channel MOSFET 60 V / 0.015 Ohm; / 50 A Datenblatt: STP55NF06.pdf

€ 0 .40*

ST-Microelectronics

STP80NF55-06FP

Beschreibung: N-channel MOSFET 55V / 0.005Ω / 80A Datenblatt: STP80NF55.pdf

€ 1 .25*

ST-Microelectronics

STW20NK50Z

SuperMESH™ Power MOSFET Zener-protected VDS Drain-source voltage = 500 V VGS Gate-source voltage = +- 30 V ID Drain current (continuous) at TC = 25 C = 20 A ID Drain current (continuous) at TC = 100 C = 12.6 A IDM Drain current (pulsed) = 68 A PTOT Total dissipation at TC = 25 C = 190 W Derating factor = 1.52 W/C ESD Gate-source human body mode (R=1.5 k?, C=100 pF) = 6 kV dv/dt Peak diode recovery voltage slope = 4.5 V/ns Tstg Storage temperature -55 to 150 C Datenblatt: STW20NK50Z.pdf

€ 1 .10*

ST-Microelectronics

STW6NC90Z

N-channel Zener-Protected PowerMESH]III MOSFET 900 V / 2.1 Ω / 5.2 A VDS Drain-source Voltage (VGS = 0) = 900 V VDGR Drain-gate Voltage (RGS = 20 kW) = 900 V VGS Gate- source Voltage = +-25 V ID Drain Current (continuos) at TC = 25C = 5.2 A ID Drain Current (continuos) at TC = 100C = 3.3 A IDM (1) Drain Current (pulsed) = 21 A PTOT Total Dissipation at TC = 25C = 160 W Derating Factor = 1.52 W/C IGS Gate-source Current = 50 mA VESD(G-S) Gate source ESD(HBM-C=100pF, R=15KW) = 4 KV dv/dt Peak Diode Recovery voltage slope = 3 V/ns Tstg Storage Temperature = –65 to 150 C Datenblatt: STW6NC90Z.pdf

€ 7 .00*

ST-Microelectronics

STWA20N95K5

N-Channel MOSFET Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 950 V Id - Continuous Drain Current: 17.5 A Rds On - Drain-Source Resistance: 330 mOhms Vgs - Gate-Source Voltage: 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage: 3 V Qg - Gate Charge: 40 nC Pd - Power Dissipation: 250 W Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C

€ 4 .00*