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ST-Microelectronics

SD56120

RF MOSFET Transistors Transistor Polarity: N-Channel Technology: Si Id - Continuous Drain Current: 14 A Vds - Drain-Source Breakdown Voltage: 65 V Operating Frequency: 1 GHz Gain: 14 dB Output Power: 100 W Minimum Operating Temperature: - 65 C Maximum Operating Temperature: + 150 C Datenblatt: SD56120.pdf

€ 150 .00*

Fairchild

SFP9644

Advanced Power P-Channel MOSFET - Transistor Polarity: P-Channel - Vds - Drain-Source Breakdown Voltage: - 250 V - Id - Continuous Drain Current: - 8.6 A - Rds On - Drain-Source Resistance: 800 mOhms - Vgs - Gate-Source Voltage: 30 V - Minimum Operating Temperature: - 55 C - Maximum Operating Temperature: + 150 C - Pd - Power Dissipation: 123 W Datenblatt: SFP9644.pdf

€ 0 .50*

Fairchild

SGP23N60UFD

Beschreibung:Ultra-Fast IGBT 600V / 23A / 100W Datenblatt: SGP23N60UFD.pdf

€ 1 .00*

Vishay

SI1426DH-T1-E3

N-Channel 30 V (D-S) MOSFET Datenblatt: SI1426DH.pdf

€ 0 .10*

Vishay

SI1912EDH-T1-E3

Dual N-Channel 20 V (D-S) MOSFET FET Type: Dual N-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Continuous Drain Current (Id): 1.13A Rds On (Max): 280 mOhm Vgs(th) (Max): 450mV Gate Charge (Qg): 1nC Max Power: 570mW Operating Temperature: -55°C / 150°C Datenblatt: SI1912EDH.pdf

€ 0 .15*

Siliconix

SI2301DS

Beschreibung: P-Channel 1.25-W, 2.5-V MOSFET Datenblatt: SI2301DS.pdf

€ 0 .15*

Vishay

SI2302ADS-T1-E3

N-Channel 1.25-W, 2.5-V MOSFET FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 20V Current - Continuous Drain (Id) : 2.1A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V Vgs(th) (Max): 1.2V Gate Charge (Qg) (Max): 10nC Vgs (Max) : +-8V Input Capacitance (Ciss) (Max): 300pF Power Dissipation (Max): 700mW Rds On (Max): 60 mOhm Operating Temperature: -55°C ... 150°C Datenblatt: SI2302ADS.pdf

€ 0 .17*

Vishay

SI2303BDS-T1-E3

Single P-Channel, MOSFET Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 2.6 A Rds On - Drain-Source Resistance: 70 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 1.5 V Qg - Gate Charge: 2.6 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Datenblatt: SI2303BDS.pdf

€ 0 .32*

Vishay

SI2304BDS-T1-E3

MOSFET N-Channel Technology: Si Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 2.6 A Rds On - Drain-Source Resistance: 70 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 3 V Qg - Gate Charge: 2.6 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Datenblatt: SI2304BDS.pdf

€ 0 .07*

Vishay

SI2304BDS-T1-E3

€ 0 .09*

Vishay

SI2307DS

Beschreibung: P-Channel 30-V (D-S) MOSFET Datenblatt: SI2307DS.pdf

€ 0 .25*

Vishay

SI2307DS-T1

Beschreibung: Single P-Channel, MOSFET -30V / -3A / 0,064 Ohm Datenblatt: SI2307DS.pdf

€ 0 .25*

Vishay

SI2308BDS-T1-GE3

N-Channel 60-V (D-S) MOSFET - Vds = 60V - Rdson= 0.156 Ohm at Vgs=10V - ID = 2.3A - Qg = 2.3nC - APPLICATIONS: Battery Switch, DC/DC Converter Datenblatt: SI2308DS.pdf

€ 0 .22*

Vishay

SI3443BDV-T1-E3

Beschreibung: P-Channel 2.5-V (G-S) MOSFET Datenblatt: SI3443BDV.pdf

€ 0 .22*

Vishay

SI4411DY-T1-E3

Beschreibung: P-Channel MOSFET -30V/-13A/0,008 Ohm Datenblatt: SI4411DY.pdf

€ 0 .50*

Siliconix

SI4412DY

Beschreibung: N-Channel 30-V (D-S) Rated MOSFET Datenblatt: SI4412DY.pdf

€ 0 .30*

Siliconix

SI4500DY

Beschreibung: Complementary MOSFET Half-Bridge (N- and P-Channel) Datenblatt: SI4500DY.pdf

€ 0 .40*

Vishay

SI4505DY

Beschreibung: N- and P-Channel MOSFET Datenblatt: SI4505DY.pdf

€ 0 .25*

Siliconix

SI4532ADY

Beschreibung: N- and P-Channel 30-V (D-S) MOSFET Datenblatt: SI4532ADY.pdf

€ 0 .25*

Siliconix

SI4834DY

Beschreibung: Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode Datenblatt: SI4834DY.pdf

€ 0 .75*

Siliconix

SI4936DY

Beschreibung: Dual N-Channel 30-V (D-S) MOSFET Datenblatt: SI4936DY.pdf

€ 0 .20*

Vishay

SI4966DY-T1-E3

Beschreibung: Dual N-Channel 2.5-V (G-S) MOSFET Datenblatt: SI4966DY.pdf

€ 0 .30*

Vishay

SI5486DU-T1-GE3

N-Channel MOSFET Drain to Source Voltage Vdss: 20 V Current - Continuous Drain Id: 12A Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max): 15mOhm at 7.7A, 4.5V Vgs(th) (Max) at Id: 1V at 250µA Gate Charge (Qg) (Max): 54 nC Vgs (Max): +-8V Input Capacitance (Ciss) (Max): 2100 pF Power Dissipation (Max): 3.1W Operating Temperature: -55C to 150C Datenblatt: SI5486DU.pdf

€ 0 .80*

Siliconix

SI6803DQ-T1

Beschreibung: N- and P-Channel Half-Bridge, Reduced Qg, Fast Switching Datenblatt: SI6803DQ.pdf

€ 0 .20*

Siliconix

SI7440DP

Beschreibung: N-Channel 30-V (D-S) Fast Switching MOSFET Datenblatt: SI7440DP.pdf

€ 0 .40*

Siliconix

SI7440DP-T1-E3

N-Channel 30-V (D-S) Fast Switching MOSFET Datenblatt: SI7440DP.pdf

€ 0 .68*

Vishay

SI7469DP-T1-E3

P-Channel MOSFET Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 80 V Id - Continuous Drain Current: 28 A Rds On - Drain-Source Resistance: 29 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 3 V Qg - Gate Charge: 160 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 83 W Datenblatt: SI7469DP.pdf

€ 1 .85*

Vishay

SI7658ADP-T1-GE3

N-Channel MOSFET Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 60 A Rds On - Drain-Source Resistance: 2.2 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 1.2 V Qg - Gate Charge: 110 nC Pd - Power Dissipation: 83 W Minimum Operating Temperature: - 50 C Maximum Operating Temperature: + 150 C Datenblatt: SI7658ADP.pdf

€ 1 .62*

Vishay

SI7852ADP-T1-E3

MOSFET 80V 30A 62.5W Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 80 V Id - Continuous Drain Current: 30 A Rds On - Drain-Source Resistance: 17 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 2.5 V Qg - Gate Charge: 45 nC Pd - Power Dissipation: 62.5 W Minimum Operating Temperature: 55 C Maximum Operating Temperature: + 150 C

€ 2 .15*