P...
Eudyna Devices Inc.
P0120009P
2W GaAs Power FET
- Up to 2.7 GHz frequency band
- Beyond +31 dBm output power
- Up to +48dBm Output IP3
- High Drain Efficiency
- 11dB Gain at 2.1GHz
- SOT-89 SMT Package
- Low Noise Figure
Applications
- Wireless communication system
- Cellular, PCS, PHS, W-CDMA, WLAN
Datenblatt:
P0120009P.pdf
€
0
.60*
ST-Microelectronics
PD84006L-E
Beschreibung: RF Power Transistor LDmoST Plastik Familily
Datenblatt:
PD84006L.pdf
€
3
.00*
NEXPERIA
PUMH9,125
NPN/NPN Resistor-Equipped Double Transistor
Configuration: Dual
Transistor Polarity: NPN
Typical Input Resistor: 0 kOhms
Typical Resistor Ratio: 0.213
Collector- Emitter Voltage VCEO Max: 50 V
Continuous Collector Current: 100 mA
Peak DC Collector Current: 100 mA
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 150 C
Datenblatt:
PUMH9.pdf
€
0
.06*
