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ON-Semiconductor
NGTB40N120FL3WG
IGBT Transistors
Configuration: Single
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.7 V
Maximum Gate Emitter Voltage: 20 V
Continuous Collector Current at 25 C: 160 A
Pd - Power Dissipation: 454 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Datenblatt:
NGTB40N120FL3WG.pdf
€
6
.20*