N...
ON-Semiconductor
NGTB40N120FL3WG
IGBT Transistors
Configuration: Single
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.7 V
Maximum Gate Emitter Voltage: 20 V
Continuous Collector Current at 25 C: 160 A
Pd - Power Dissipation: 454 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Datenblatt:
NGTB40N120FL3WG.pdf
€
6
.20*
Renesas
NP80N04KHE-E1-AZ
Beschreibung: N-channel MOS Field Effect Transistors designed for high current switching applications 40V / 80A / 6,2 mOhm
Datenblatt:
NP80N04KHE.pdf
€
0
.50*
Renesas
NP80N055MHE-S18-AY
Beschreibung: Switching N-Channel Power MOSFET 55V / 80A / 11mOhm
Datenblatt:
NP80N055MHE.pdf
€
1
.00*