MT...
ON-Semiconductor
MTD10N10EL
MOS E−FET™ Power Field Effect Transistor 100V / 10A / 0.22Ohm
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id): 10A (Tc)
Drive Voltage: 5V
Rds On: 220mOhm
Vgs(th) (Max): 2V
Gate Charge: 15nC at 5V
Vgs (Max): ±15V
Input Capacitance: 1040pF at 25V
Power Dissipation (Max): 1.75W (Ta), 40W (Tc)
Operating Temperature: -55°C - 150°C (TJ)
Datenblatt:
MTD10N10EL.pdf
€
0
.20*
Motorola
MTD3055V
Beschreibung: N-Channel Power MOSFET 60V / 12A
Datenblatt:
MTD3055V.pdf
€
0
.20*