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Toshiba

MG100G2YL1

Beschreibung: Transistor Module 450V / 100A

€ 40 .00*

Fairchild

MJD112TF

Beschreibung: NPN Silicon Power Transistor 100V / 2A Datenblatt: MJD112.pdf

€ 0 .15*

Motorola

MJD32C

Beschreibung: Silicon Power Transistor 40V / 3A Datenblatt: MJD32.pdf

€ 0 .35*

Motorola

MJD32CT4

Beschreibung: Silicon Power Transistor 40V / 3A Datenblatt: MJD32.pdf

€ 0 .10*

Motorola

MJD32RL

Beschreibung: Silicon Power Transistor 40V / 3A Datenblatt: MJD32.pdf

€ 0 .20*

ON-Semiconductor

MJD44H11

Beschreibung: Silicon Power Transistor 80V / 8A Datenblatt: MJD44H11.pdf

€ 0 .26*

ON-Semiconductor

MJD45H11T4

Beschreibung: PNP Silicon Power Transistor 80V / 8A Datenblatt: MJD44H11.pdf

€ 0 .20*

Diodes Inc.

MMDT3904-7-F

40V DUAL NPN SMALL SIGNAL TRANSISTOR 40V / 200mA / 200mW - Epitaxial Planar Die Construction - Ideal for Medium Power Amplification and Switching - Ultra-Small Surface Mount Package - Totally Lead-Free & Fully RoHS Compliant - Qualified to AEC-Q101 Standards for High Reliability Datenblatt: MMDT3904.pdf

€ 0 .08*

Motorola

MPS-U45

NPN Power Transistor 40V / 2A / 10W

€ 4 .50*

Motorola

MPS-U95

Beschreibung: Bipolar PNP UHF/Microwave Transisitor 40V / 2A / 1W

€ 12 .50*

Motorola

MSD601-RT1

Beschreibung: NPN General Purpose Amplifier Transistor 60V / 100mA Datenblatt: MSD601RT1.pdf

€ 0 .02*

ON-Semiconductor

MTD10N10EL

MOS E−FET™ Power Field Effect Transistor 100V / 10A / 0.22Ohm FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id): 10A (Tc) Drive Voltage: 5V Rds On: 220mOhm Vgs(th) (Max): 2V Gate Charge: 15nC at 5V Vgs (Max): ±15V Input Capacitance: 1040pF at 25V Power Dissipation (Max): 1.75W (Ta), 40W (Tc) Operating Temperature: -55°C - 150°C (TJ) Datenblatt: MTD10N10EL.pdf

€ 0 .20*

Motorola

MTD3055V

Beschreibung: N-Channel Power MOSFET 60V / 12A Datenblatt: MTD3055V.pdf

€ 0 .20*

ON-Semiconductor

MUN5311DW1T1G

Beschreibung: Bias Resistor Transistor Datenblatt: MUN5311DW1T1G.pdf

€ 0 .05*