IX...
IXYS
IXTK110N30
Power MOSFET
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 300 V
Id - Continuous Drain Current: 110 A
Pd - Power Dissipation: 730 W
Rds On - Drain-Source Resistance: 26 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Datenblatt:
IXTK110N30.pdf
€
10
.10*
IXYS
IXTP90N055T
TrenchMV(TM) Power MOSFET
Mounting Style: Through Hole
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 55 V
Id - Continuous Drain Current: 90 A
Rds On - Drain-Source Resistance: 8.8 mOhms
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Configuration: Single
Pd - Power Dissipation: 176 W
Datenblatt:
IXTP90N055T.pdf
€
1
.25*