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Infineon
IPB019N08N3 G
N-Channel OptiMOS (TM) 3 Power Transistor 80V / 180A / 1.9mOhm - Optimized technology for DC-DC converters - Excellent gate charge x R DS(ON) product (FOM) - Superior thermal resistance - Dual sided cooling - Low parasitic inductance - Low profile (

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1 .50*
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IPB037N06N3GATMA1
N-Channel MOSFET Technology: Si Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 60 V Id - Continuous Drain Current: 90 A Rds On - Drain-Source Resistance: 3 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 2 V Qg - Gate Charge: 98 nC Pd - Power Dissipation: 188 W Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 175 C Datenblatt: IPB037N06N3G.pdf

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1 .03*
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IPB79CN10NG
N-Channel OptiMOS (TM) 2 Power Transistor 100V / 13A / 78mOhm Datenblatt: IPB79CN10NG.pdf

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0 .60*
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IPB80N06S2-05
OptiMos N-Channel Power Transistor 55V/80A/4.8mOhm - N-channel - Enhancement mode - Automotive AEC Q101 qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green package (lead free) - Ultra low Rds(on) - 100% Avalanche tested - Vds - Drain-Source Breakdown Voltage: 55 V - Id - Continuous Drain Current: 80 A - Rds On - Drain-Source Resistance: 4.8 mOhms - Vgs - Gate-Source Voltage: 20 V - Minimum Operating Temperature: - 55 C - Maximum Operating Temperature: + 175 C - Configuration: Single - Pd - Power Dissipation: 300 W

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1 .00*
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IPB80N06S2L-11
OptiMos N-Channel Power Transistor 55V/80A/10.7mOhm Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 55 V Id - Continuous Drain Current: 80 A Rds On - Drain-Source Resistance: 10.7 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 1.6 V Qg - Gate Charge: 80 nC Pd - Power Dissipation: 158 W Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 175 C Datenblatt: IPB80N06S2L-11.pdf

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1 .22*
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IPP50R199CP
Beschreibung: N-Channel CoolMOS (TM) Power Transistor 550V / 17A / 0.199 Ohm Datenblatt: IPP50R199CP.pdf

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1 .35*