IK...
Infineon
IKW30N60H3
High Speed DuoPack: IGBT In Trench And Fieldstop Technology With Soft, Fast Recovery Anti-Parallel Diode 600V / 30A
Configuration: Single
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 1.95 V
Maximum Gate Emitter Voltage: - 20 V, + 20 V
Continuous Collector Current at 25 C: 60 A
Pd - Power Dissipation: 187 W
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 175 C
Datenblatt:
IKW30N60H3.pdf
€
1
.40*
Infineon
IKW30N60H3
High Speed DuoPack: IGBT In Trench And Fieldstop Technology With Soft, Fast Recovery Anti-Parallel Diode 600V / 30A
Configuration: Single
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 1.95 V
Maximum Gate Emitter Voltage: - 20 V, + 20 V
Continuous Collector Current at 25 C: 60 A
Pd - Power Dissipation: 187 W
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 175 C
Datenblatt:
IKW30N60H3.pdf
€
1
.52*