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Infineon

IKW30N60H3

High Speed DuoPack: IGBT In Trench And Fieldstop Technology With Soft, Fast Recovery Anti-Parallel Diode 600V / 30A Configuration: Single Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 1.95 V Maximum Gate Emitter Voltage: - 20 V, + 20 V Continuous Collector Current at 25 C: 60 A Pd - Power Dissipation: 187 W Minimum Operating Temperature: - 40 C Maximum Operating Temperature: + 175 C Datenblatt: IKW30N60H3.pdf

€ 1 .40*

Infineon

IKW30N60H3

€ 1 .52*

Rohm

IMT1AT110

General purpose transistor (dual transistors) ransistor Polarity: PNP Configuration: Dual Collector- Emitter Voltage VCEO Max: - 50 V Collector- Base Voltage VCBO: - 60 V Emitter- Base Voltage VEBO: - 6 V Collector-Emitter Saturation Voltage: - 500 mV Maximum DC Collector Current: - 150 mA Pd - Power Dissipation: 300 mW Gain Bandwidth Product fT: 140 MHz Datenblatt: IMT1A.pdf

€ 0 .15*

Infineon

IPB019N08N3 G

N-Channel OptiMOS (TM) 3 Power Transistor 80V / 180A / 1.9mOhm - Optimized technology for DC-DC converters - Excellent gate charge x R DS(ON) product (FOM) - Superior thermal resistance - Dual sided cooling - Low parasitic inductance - Low profile (

€ 1 .50*

Infineon

IPB037N06N3GATMA1

N-Channel MOSFET Technology: Si Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 60 V Id - Continuous Drain Current: 90 A Rds On - Drain-Source Resistance: 3 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 2 V Qg - Gate Charge: 98 nC Pd - Power Dissipation: 188 W Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 175 C Datenblatt: IPB037N06N3G.pdf

€ 1 .03*

Infineon

IPB79CN10NG

N-Channel OptiMOS (TM) 2 Power Transistor 100V / 13A / 78mOhm Datenblatt: IPB79CN10NG.pdf

€ 0 .60*

Infineon

IPB80N06S2-05

OptiMos N-Channel Power Transistor 55V/80A/4.8mOhm - N-channel - Enhancement mode - Automotive AEC Q101 qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green package (lead free) - Ultra low Rds(on) - 100% Avalanche tested - Vds - Drain-Source Breakdown Voltage: 55 V - Id - Continuous Drain Current: 80 A - Rds On - Drain-Source Resistance: 4.8 mOhms - Vgs - Gate-Source Voltage: 20 V - Minimum Operating Temperature: - 55 C - Maximum Operating Temperature: + 175 C - Configuration: Single - Pd - Power Dissipation: 300 W

€ 1 .00*

Infineon

IPB80N06S2L-11

OptiMos N-Channel Power Transistor 55V/80A/10.7mOhm Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 55 V Id - Continuous Drain Current: 80 A Rds On - Drain-Source Resistance: 10.7 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 1.6 V Qg - Gate Charge: 80 nC Pd - Power Dissipation: 158 W Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 175 C Datenblatt: IPB80N06S2L-11.pdf

€ 1 .22*

Infineon

IPP50R199CP

Beschreibung: N-Channel CoolMOS (TM) Power Transistor 550V / 17A / 0.199 Ohm Datenblatt: IPP50R199CP.pdf

€ 1 .35*

International Rectifier

IR21844SPBF

Gate Drivers Type: Half-Bridge Mounting Style: SMD/SMT Number of Drivers: 2 Driver Number of Outputs: 2 Output Output Current: 2.3 A Supply Voltage - Min: 10 V Supply Voltage - Max: 20 V Rise Time: 40 ns Fall Time: 20 ns Minimum Operating Temperature: - 40 C Maximum Operating Temperature: + 125 C

€ 1 .92*

International Rectifier

IR3476MTRPBF

Switching Voltage Regulators 12A Topology: Buck Output Voltage: 500 mV to 12 V Output Current: 12 A Number of Outputs: 1 Output Input Voltage, Min: 3 V Input Voltage, Max: 27 V Switching Frequency: 750 kHz Minimum Operating Temperature: - 40 C Maximum Operating Temperature: + 125 C Datenblatt: IR3476M.pdf

€ 8 .02*

International Rectifier

IRF1324S-7PPBF

Beschreibung: N-Channel HEXFET Power MOSFET, 24V / 240A / 0.8mOhm Datenblatt: IRF1324S-7PPBF.pdf

€ 2 .50*

International Rectifier

IRF4905LPBF

HEXFET® Power MOSFET - Number of Channels: 1 Channel - Transistor Polarity: P-Channel - Vds - Drain-Source Breakdown Voltage: - 55 V - Id - Continuous Drain Current: - 74 A - Rds On - Drain-Source Resistance: 20 mOhms - Vgs - Gate-Source Voltage: 20 V - Qg - Gate Charge: 120 nC - Configuration: Single - Pd - Power Dissipation: 200 W Datenblatt: IRF4905LPBF.pdf

€ 0 .65*

International Rectifier

IRF530N

Beschreibung: Power MOSFET Vdss=100V, Rds(on)=90mohm, Id=17A - mit Testpunkt Datenblatt: IRF530N.pdf

€ 0 .35*

Samsung

IRF610

Beschreibung: N-Channel Power MOSFETs, 3.5A / 200V Datenblatt: IRF610.pdf

€ 0 .25*

Fairchild

IRF630A

Beschreibung: N-Channel Advanced Power MOSFET, 9A / 200V Datenblatt: IRF630A.pdf

€ 0 .40*

ST-Microelectronics

IRF640

N-Channel Mesh overlay™ Power MOSFET, 18A / 200V Datenblatt: IRF640.pdf

€ 0 .40*

International Rectifier

IRF6617

Beschreibung: DirectFET (TM) Power MOSFET 30V / 14A / 8.1mOhm Datenblatt: IRF6617.pdf

€ 0 .50*

International Rectifier

IRF6621

Beschreibung: N-Channel DirectFETPower MOSFET, 30V / 12A / 7.0mOhm Datenblatt: IRF6621.pdf

€ 0 .30*

International Rectifier

IRF6623

Beschreibung: HEXFET(TM) Power MOSFET 20V / 16A / 5.7mOhm Datenblatt: IRF6623.pdf

€ 0 .30*

International Rectifier

IRF7201

Beschreibung: N-Channel HEXFET Power MOSFET 30V/5,8A Datenblatt: IRF7201.pdf

€ 0 .22*

International Rectifier

IRF7316

Beschreibung: P-Channel MOSFET -30V/-4,9A/0,058 Ohm Datenblatt: IRF7316PBF.pdf

€ 0 .35*

International Rectifier

IRF7458TRPBF

Beschreibung: SMPS MOSFET 30V / 14A / 8.0mOhm Datenblatt: IRF7458.pdf

€ 0 .30*

International Rectifier

IRF7492PBF

N-Channel HEXFET Power MOSFET 200V / 3.7A / 79mOhm FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id): 3.7A Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max): 79mOhm Vgs(th) (Max): 2.5V Gate Charge (Qg) (Max): 59nC Vgs (Max): +-20V Input Capacitance (Ciss) (Max): 1820pF Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C to 150C Datenblatt: IRF7492.pdf

€ 0 .50*

International Rectifier

IRF7700

P-Channel HEXFET Power MOSFET -20V/-8,6A - Number of Channels: 1 Channel - Transistor Polarity: P-Channel - Vds - Drain-Source Breakdown Voltage: - 20 V - Id - Continuous Drain Current: - 8.6 A - Rds On - Drain-Source Resistance: 15 mOhms - Vgs th - Gate-Source Threshold Voltage: - 1.2 V - Qg - Gate Charge: 89 nC - Maximum Operating Temperature: + 150 C - Pd - Power Dissipation: 1.5 W Datenblatt: IRF7700.pdf

€ 0 .30*

International Rectifier

IRF7805QPbF

Beschreibung: N-Channel MOSFET, 30V / 13A / 11mOhm data sheet: IRF7805Q.pdf

€ 0 .80*

International Rectifier

IRF820S

Beschreibung: HEXFET N-Channel Power MOSFETs, 2.5A / 500V Datenblatt: IRF820S.pdf

€ 0 .55*

Vishay

IRF830PBF

Beschreibung: N-Channel Advanced Power MOSFET, 9A / 200V Datenblatt: IRF830.pdf

€ 0 .67*

Vishay

IRF840ASPBF

HEXFET Power MOSFET, 500V / 8A Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 500 V Id - Continuous Drain Current: 8 A Rds On - Drain-Source Resistance: 850 mOhms Vgs - Gate-Source Voltage: - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage: 2 V Qg - Gate Charge: 38 nC Pd - Power Dissipation: 125 W Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Datenblatt: IRF840S.pdf

€ 1 .11*

International Rectifier

IRF840S

€ 0 .52*

International Rectifier

IRF9530

P-Channel Power MOSFET, -100V / -12A - Maximum Gate Source Voltage: ±20 V - Typical Turn-Off Delay Time: 31 ns - Channel Type: P - Typical Rise Time: 52 ns - Maximum Continuous Drain Current: -12 A - Maximum Drain Source Voltage: -100 V - with test-point Datenblatt: IRF9530.pdf

€ 0 .50*

Fairchild

IRF9540

P-Channel Power MOSFET - VDS (V) - 100 - RDS(on) VGS = - 10 V 0.20 Ohm - Qg (Max.) (nC) 61 - Qgs (nC) 14 - Qgd (nC) 29 - Dynamic dV/dt Rating - Repetitive Avalanche Rated - P-Channel - 175 °C Operating Temperature - Fast Switching - Ease of Paralleling - Simple Drive Requirements Datenblatt: IRF9540.pdf

€ 0 .40*

International Rectifier

IRF9Z30

Beschreibung: P-Channel Power HEXFET Transistors, -18A / -50V / 0.14 Ohm Datenblatt: IRF9Z30.pdf

€ 0 .75*

International Rectifier

IRFB3004PBF

MOSFET 40V / 195A / 1.7mOhm Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 40 V Id - Continuous Drain Current: 340 A Rds On - Drain-Source Resistance: 1.4 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 1.8 V Qg - Gate Charge: 240 nC Pd - Power Dissipation: 380 W Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 175 C Datenblatt: IRFB3004PBF.pdf

€ 1 .25*

International Rectifier

IRFB3207ZPBF

N-Channel MOSFET 75V / 120A / 3.3mOhm Datenblatt: IRFB3207ZPBF.pdf

€ 1 .10*

International Rectifier

IRFB38N20DPBF

N-Channel Power MOSFET Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 200 V Id - Continuous Drain Current: 44 A Rds On - Drain-Source Resistance: 54 mOhms Vgs - Gate-Source Voltage: - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage: 1.8 V Pd - Power Dissipation: 3.8 W Qg - Gate Charge: 91 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 175 C Datenblatt: IRFB38N20D.pdf

€ 0 .94*

International Rectifier

IRFD024PBF

N-Channel MOSFET Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 60 V Id - Continuous Drain Current: 2.5 A Rds On - Drain-Source Resistance: 100 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 2 V Qg - Gate Charge: 25 nC Pd - Power Dissipation: 1.3 W Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 175 C

€ 1 .94*