G...
GeneSic Semiconductor Inc
G3R75MT12K
MOSFET 1200V / 31A
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Id - Continuous Drain Current: 31 A
Rds On - Drain-Source Resistance: 75 mOhms
Vgs - Gate-Source Voltage: - 5 V, + 15 V
Vgs th - Gate-Source Threshold Voltage: 2.7 V
Qg - Gate Charge: 47 nC
Pd - Power Dissipation: 137 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Datenblatt:
G3R75MT12K.pdf
€
4
.00*
