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Mitsubishi Semiconductor

FS100VSJ-03

Beschreibung: N-channel Power MOSFET 30V / 100A Datenblatt: FS100VSJ.pdf

€ 0 .50*

Mitsubishi Semiconductor

FS10KM-10

N-channel Power MOSFET 500V / 10A Drain-source voltage VDSS: 500V Gate-source voltage VGSS: +-30V Drain current Id: 10A Drain current (Pulsed) Idm: 30A Maximum power dissipation Pd: 35W Channel temperature Tch: -55 to +150C Storage temperature Tstg: -55 to +150C Datenblatt: FS10KM-10.pdf

€ 1 .00*

Mitsubishi Semiconductor

FS10KM-12

Beschreibung: N-Channel Power MOSFET For High-Speed Switching Use 600V / 10A / 0.94 Ohm Datenblatt: FS10KM-12.pdf

€ 1 .40*

Mitsubishi Semiconductor

FS10KM-5

Beschreibung: N-channel Power MOSFET 250V / 10A Datenblatt: FS10KM-5.pdf

€ 1 .50*

Mitsubishi Semiconductor

FS10SM-16A

Beschreibung: N-Channel Power MOSFET For High-Speed Switching Use 800V / 10A / 0.98 Ohm Datenblatt: FS10SM-16A.pdf

€ 7 .00*

Mitsubishi Semiconductor

FS10UMA-5A

Beschreibung: N-Channel Power MOSFET For High-Speed Switching Use 250V / 10A / 0.52 Ohm Datenblatt: FS10UMA-5A.pdf

€ 1 .00*

Infineon

FS15R06VE3B2

IGBT-Module Configuration: IGBT-Inverter Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 1.55 V Continuous Collector Current at 25 C: 22 A Gate-Emitter Leakage Current: 400 nA Pd - Power Dissipation: 65 W Package/Case: Module Minimum Operating Temperature: - 40 C Maximum Operating Temperature: + 150 C Datenblatt: FS15R06VE3.pdf

€ 11 .78*

Mitsubishi Semiconductor

FS7KM-12

Beschreibung: N-Channel Power MOSFET For High-Speed Switching Use 600V / 7A / 1.3 Ohm Datenblatt: FS7KM-12.pdf

€ 1 .00*

Mitsubishi Semiconductor

FS7KM-16A

Beschreibung: Power MOSFET for High Speed Switching Use Datenblatt: FS7KM-16A.pdf

€ 1 .25*