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Zetex Semiconductor

FCX690BTA

NPN Silicon Power (Switching) Transistro 45V / 2A / 1W Datenblatt: FCX690B.pdf

€ 0 .21*

Zetex Semiconductor

FCX790ATA

Beschreibung: PNP Slilicon Power (Switching) Transistor -40V / -2A / 1W Datenblatt: FCX790ATA.pdf

€ 0 .12*

ON-Semiconductor

FDBL0260N100

MOSFET N-Channel Power Trench Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 100 V Id - Continuous Drain Current: 200 A Rds On - Drain-Source Resistance: 2.6 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 2 V Qg - Gate Charge: 83 nC Pd - Power Dissipation: 250 W Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Datenblatt: FDBL0260N100.pdf

€ 2 .64*

Fairchild

FDC6036P

P-Channel 1.8V Specified PowerTrench(R) MOSFET -20V / -5A / 44mOhm Transistor Polarity: P-Channel Number of Channels: 2 Channel Vds - Drain-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 5 A Rds On - Drain-Source Resistance: 44 mOhms Vgs - Gate-Source Voltage: - 8 V, + 8 V Pd - Power Dissipation: 1.8 W Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Datenblatt: FDC6036P.pdf

€ 0 .20*

Fairchild

FDC638P

Single P-Channel 2.5V Specified PowerTrench® MOSFET -20V / -4.5A / 48mOhm Datenblatt: FDC638P.pdf

€ 0 .20*

Fairchild

FDC6432SH

Beschreibung: 12V P-Channel PowerTrench MOSFET, 30V PowerTrenchSyncFET Datenblatt: FDC6432SH.pdf

€ 0 .20*

ON-Semiconductor

FDN337N

N-Channel MOSFET Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 2.2 A Rds On - Drain-Source Resistance: 65 mOhms Vgs - Gate-Source Voltage: - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage: 400 mV Qg - Gate Charge: 9 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 500 mW Datenblatt: FDN337N.pdf

€ 0 .25*

Fairchild

FDS6574A

N-Channel MOSFET Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 16 A Rds On - Drain-Source Resistance: 6 mOhms Vgs - Gate-Source Voltage: - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage: 400 mV Qg - Gate Charge: 105 nC Pd - Power Dissipation: 2.5 W Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 175 C Datenblatt: FDS6574A.pdf

Varianten ab 0,96 €*

€ 0 .75*

Fairchild

FDS6912A

Beschreibung: Dual N-Channel Logic Level PowerTrenchÒ MOSFET 30V / 6A / 28mOhm Datenblatt: FDS6912A.pdf

€ 0 .15*

Fairchild

FDS7064N7

Beschreibung: 30V N-Channel PowerTrench(R) MOSFET Datenblatt: FDS7064N7.pdf

€ 0 .25*

ON-Semiconductor

FDS9431A

P-Channel MOSFET Transistor Polarity: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 3.5 A Rds On - Drain-Source Resistance: 130 mOhms Vgs - Gate-Source Voltage: - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage: 1 V Qg - Gate Charge: 8.5 nC Pd - Power Dissipation: 2.5 W Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Datenblatt: FDS9431A.pdf

€ 0 .20*

Infineon

FF600R12ME4

IGBT Modules IGBT 1200V 600A Configuration: Dual Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 2.1 V Continuous Collector Current at 25 C: 995 A Gate-Emitter Leakage Current: 400 nA Pd - Power Dissipation: 4050 W Minimum Operating Temperature: - 40 C Maximum Operating Temperature: + 150 C Datenblatt: FF600R12ME4.pdf

€ 175 .00*

Zetex Semiconductor

FMMT3904TA

Beschreibung: NPN Silicon Planar Switching Transistor Datenblatt: FMMT3904.pdf

€ 0 .10*

Infineon

FP15R12YT3

IGBT-Module 1200V / 25A Datenblatt: FP15R12YT3.pdf

€ 36 .00*

Mitsubishi Semiconductor

FS100VSJ-03

Beschreibung: N-channel Power MOSFET 30V / 100A Datenblatt: FS100VSJ.pdf

€ 0 .50*

Mitsubishi Semiconductor

FS10KM-10

N-channel Power MOSFET 500V / 10A Drain-source voltage VDSS: 500V Gate-source voltage VGSS: +-30V Drain current Id: 10A Drain current (Pulsed) Idm: 30A Maximum power dissipation Pd: 35W Channel temperature Tch: -55 to +150C Storage temperature Tstg: -55 to +150C Datenblatt: FS10KM-10.pdf

€ 1 .00*

Mitsubishi Semiconductor

FS10KM-12

Beschreibung: N-Channel Power MOSFET For High-Speed Switching Use 600V / 10A / 0.94 Ohm Datenblatt: FS10KM-12.pdf

€ 1 .40*

Mitsubishi Semiconductor

FS10KM-5

Beschreibung: N-channel Power MOSFET 250V / 10A Datenblatt: FS10KM-5.pdf

€ 1 .50*

Mitsubishi Semiconductor

FS10SM-16A

Beschreibung: N-Channel Power MOSFET For High-Speed Switching Use 800V / 10A / 0.98 Ohm Datenblatt: FS10SM-16A.pdf

€ 7 .00*

Mitsubishi Semiconductor

FS10UMA-5A

Beschreibung: N-Channel Power MOSFET For High-Speed Switching Use 250V / 10A / 0.52 Ohm Datenblatt: FS10UMA-5A.pdf

€ 1 .00*

Infineon

FS15R06VE3B2

IGBT-Module Configuration: IGBT-Inverter Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 1.55 V Continuous Collector Current at 25 C: 22 A Gate-Emitter Leakage Current: 400 nA Pd - Power Dissipation: 65 W Package/Case: Module Minimum Operating Temperature: - 40 C Maximum Operating Temperature: + 150 C Datenblatt: FS15R06VE3.pdf

€ 11 .78*

Mitsubishi Semiconductor

FS7KM-12

Beschreibung: N-Channel Power MOSFET For High-Speed Switching Use 600V / 7A / 1.3 Ohm Datenblatt: FS7KM-12.pdf

€ 1 .00*

Mitsubishi Semiconductor

FS7KM-16A

Beschreibung: Power MOSFET for High Speed Switching Use Datenblatt: FS7KM-16A.pdf

€ 1 .25*

Zetex Semiconductor

FXT655

Beschreibung: NPN Silicon Planar Medium Power Transistor 150V / 1A / 1W Datenblatt: FXT655.pdf

€ 0 .50*

Zetex Semiconductor

FZT753

PNP SILICON PLANAR MEDIUM POWER TRANSISTOR -100V / -2A / 2W Datenblatt: FZT753.pdf

€ 0 .08*

Zetex Semiconductor

FZT857

Beschreibung: NPN Silicon Planar High Current Transistor 350V / 3,5A / 3W Datenblatt: FZT857.pdf

€ 0 .20*