CM...
Mitsubishi Semiconductor
CM100DY-24NF
High Power IGBT Module 1200V / 100A
DC Collector Current: 100A
Collector Emitter Saturation Voltage Vce(on): 1.2kV
Collector Emitter Voltage V(br)ceo: 1.2kV
Power Dissipation Pd: 650W
Transistor Case Style: Module
No. of Pins: 7Pins
Operating Temperature Max: 150°C
Datenblatt:
CM100DY-24NF.pdf
€
50
.00*
Mitsubishi Semiconductor
CM30TF-12H
Six-IGBT IGBTMOD™ H-Series Module 30 Amperes/600 Volts
Junction Temperature: –40 to 150C
Collector-Emitter Voltage: 600V
Gate-Emitter Voltage: +-20V
Collector Current Ic: 30A
Peak Collector Current Icm: 60A
Power Dissipation Pd: 150W
Datenblatt:
CM30TF-12H.pdf
€
178
.00*