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Siemens

CF750-E6327

Beschreibung: GaAs MMIC, Biased Dual Gate GaAs FET for frequencies from 400 MHz to 3 GHz Datenblatt: CF750.pdf

€ 0 .20*

Mitsubishi Semiconductor

CM100DY-24NF

High Power IGBT Module 1200V / 100A DC Collector Current: 100A Collector Emitter Saturation Voltage Vce(on): 1.2kV Collector Emitter Voltage V(br)ceo: 1.2kV Power Dissipation Pd: 650W Transistor Case Style: Module No. of Pins: 7Pins Operating Temperature Max: 150°C Datenblatt: CM100DY-24NF.pdf

€ 50 .00*

Mitsubishi Semiconductor

CM30TF-12H

Six-IGBT IGBTMOD™ H-Series Module 30 Amperes/600 Volts Junction Temperature: –40 to 150C Collector-Emitter Voltage: 600V Gate-Emitter Voltage: +-20V Collector Current Ic: 30A Peak Collector Current Icm: 60A Power Dissipation Pd: 150W Datenblatt: CM30TF-12H.pdf

€ 178 .00*

ON-Semiconductor

CPH3145-TL-E

PNP Bipolar Transistors Transistor Polarity: PNP Configuration: Single Collector- Emitter Voltage VCEO Max: 50 V Collector- Base Voltage VCBO: 50 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter Saturation Voltage: 165 mV Maximum DC Collector Current: 2 A Pd - Power Dissipation: 900 mW Gain Bandwidth Product fT: 420 MHz Datenblatt: CPH3145.pdf

€ 0 .15*

ON-Semiconductor

CPH3348-TL-W

P-Channel MOSFET Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 12 V Id - Continuous Drain Current: 3 A Rds On - Drain-Source Resistance: 215 mOhms Vgs - Gate-Source Voltage: - 10 V, + 10 V Vgs th - Gate-Source Threshold Voltage: 1.4 V Qg - Gate Charge: 5.6 nC Pd - Power Dissipation: 1 W Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Datenblatt: CPH3348.pdf

€ 0 .35*