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Philips

BU2520DF

NPN Silicon Diffused Power Transistor 800V / 10A - VCESM= 1500V - VCEO= 800V - Ic= 10A - Ptot= 45W - integrated damper diode - high-speed switching Datenblatt: BU2520DF.pdf

€ 0 .40*

Philips

BU2520DX

Beschreibung: Silicon Diffused Power Transistor Datenblatt: BU2520DX.pdf

€ 0 .80*

Philips

BU2527AF

Beschreibung: NPN Silicon Diffused Power Transistor 800V / 12A Datenblatt: BU2527AF.pdf

€ 0 .50*

Philips

BU2527DX

Beschreibung: Silicon Diffused Power Transistor Datenblatt: BU2527DX.pdf

€ 1 .05*

Philips

BU506DF

Beschreibung: NPN Silicon Diffused Power Transistor 700V / 5A / 20W Datenblatt: BU506DF.pdf

€ 1 .50*

Vishay

BUF654

Beschreibung: Silicon NPN High Voltage Switching Transistor 400V / 12A Datenblatt: BUF654.pdf

€ 0 .50*

Philips

BUK104-50L

Beschreibung: Logic level TOPFET Datenblatt: BUK10450L.pdf

€ 4 .00*

Philips

BUK453-100A

PowerMOS Transistor Drain-source voltage Vds: 100V Drain current (DC) Id: 14A Total power dissipation Ptot: 75W Drain-source on-state: Rds(ON): 0.16 Ohm data sheet: BUK453.pdf

€ 2 .55*

Philips

BUK454-200A

Beschreibung: N-Channel PowerMOS Transistor 200V / 9.2A / 0.4 Ohm Datenblatt: BUK454-200A.pdf

€ 0 .60*

Philips

BUK456-100B

N-channel PowerMOS Transistor -100V / -32A Datenblatt: BUK456-100B.pdf

€ 3 .00*

Philips

BUK543-100A

PowerMOS Transistor Logic Level FET Drain-source voltage Vds: 100V Drain current (DC) Id: 8.3A Total power dissipation Ptot: 25W Drain-source on-state: Rds(ON): 0.18 Ohm Datenblatt: BUK543.pdf

€ 2 .30*

Philips

BUK583-60A

Beschreibung: N-Channel PowerMOS Transistor Logic level FET 60V / 3.2A / 0.10 Ohm Datenblatt: BUK583-60A.pdf

€ 0 .50*

NXP

BUK7214-75B

N-channel TrenchMOS standard level FET 75V / 75A Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 75 V Id - Continuous Drain Current: 70 A Rds On - Drain-Source Resistance: 14 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Pd - Power Dissipation: 167 W Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 185 C Datenblatt: BUK7214-75B.pdf

€ 0 .81*

Philips

BUK7608-55A

Beschreibung: N-channel TrenchMOS standard level FET 55V / 75A Datenblatt: BUK7608-55A.pdf

€ 1 .25*

Philips

BUK7614-55A

Beschreibung: N-channel TrenchMOS standard level FET 55V / 73A Datenblatt: BUK7614-55A.pdf

€ 1 .00*

NEXPERIA

BUK9832-55A/CU

MOSFET N-CH 55V 12A Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 55 V Id - Continuous Drain Current: 12 A Rds On - Drain-Source Resistance: 29 mOhms Vgs - Gate-Source Voltage: - 10 V, + 10 V Vgs th - Gate-Source Threshold Voltage: 1 V Pd - Power Dissipation: 8 W Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Datenblatt: BUK9832-55A.pdf

€ 0 .31*

Siemens

BUP302

Beschreibung: IGBT Transistor 1000V / 12A Datenblatt: BUP302.pdf

€ 3 .00*

Infineon

BUP303

Beschreibung: IGBT Transistor 1000V / 23A Datenblatt: BUP303.pdf

€ 1 .50*

Siemens

BUP400

Beschreibung: IGBT Transistor 600V / 22A Datenblatt: BUP400.pdf

€ 3 .00*

ST-Microelectronics

BUV48A

NPN High Voltage Fast Switching Power Transistor 1000V / 15A / 125W - VCER Collector-emitter voltage (RBE = 10 ?) 1000 V - VCES Collector-emitter voltage (VBE = 0) 1000 V - VCEO Collector-emitter voltage (IB = 0) 450 V - VEBO Emitter-base voltage (IC = 0) 7 V - IC Collector current 15 A - ICM Collector peak current 30 A - ICP Collector peak current non repetitive (tp < 20 us) 55 A - IB Base current 4 A - IBM Base peak current 20 A - PTOT Total dissipation at Tcase = 25 °C 125 W - TSTG Storage temperature -65 to 150 °C - TJ Max. operating junction temperature 150 °C

€ 0 .85*

ST-Microelectronics

BUZ11

Beschreibung: N-Channel MOSFET 50V / 0.03 Ohm / 33A Datenblatt: BUZ11.pdf

€ 0 .50*

Fairchild

BUZ11

Beschreibung: N-Channel MOSFET 50V / 0.03 Ohm / 33A Datenblatt: BUZ11.pdf

€ 0 .75*

Siemens

BUZ21 SMD

Beschreibung: N-Channel SIPMOS Power Transistor 100V / 0.085 Ohm / 21A Datenblatt: BUZ21.pdf

€ 0 .80*

Siemens

BUZ325

Beschreibung: SIPMOS® N-ChannelPower Transistor 400V / 12,5A / 0.35 Ohm Datenblatt: BUZ325.pdf

€ 1 .75*

Siemens

BUZ349

SIPMOS Power Transistor - N channel - Enhancement mode - Avalanche-rated - VDS= 100V - Id= 32A - Rds(on) = 0,06 Ohm Datenblatt: BUZ349.pdf

€ 3 .00*

DSI Discrete Semiconductor Industries

BUZ45A DSI

N-Channel Power MOSFET 500V / 8.3A - rDS(ON) = 0.800W - SOA is Power Dissipation Limited - Nanosecond Switching Speeds - Linear Transfer Characteristics - High Input Impedance - Majority Carrier Device Datenblatt: BUZ45A.pdf

€ 6 .50*