NPN High-Voltage Transistor 300V / 100mA
- Low current (max. 100 mA)
- High voltage (max. 350 V)
- Switching and amplification
- Especially used in telephony and automotive applications
Datenblatt:
BSP20.pdf
SMD N-Channel MOSFET
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 60 V
Id - Continuous Drain Current: 2.6 A
Rds On - Drain-Source Resistance: 90 mOhms
Vgs - Gate-Source Voltage: 20 V
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Configuration: Single Dual Drain
Pd - Power Dissipation: 1.8 W
Datenblatt:
BSP318.pdf
NPN Silicon Darlington Transistors
Configuration: Single Dual Collector
Transistor Polarity: NPN
Collector- Emitter Voltage VCEO Max: 80 V
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 90 V
Maximum DC Collector Current: 1 A
Peak collector current, tp ? 10 ms ICM: 2A
Base current IB: 100mA
Total power dissipation-TS ? 124 °C Ptot: 1.5 W
Maximum Operating Temperature: + 150 C
Storage temperature Tstg: -65 ... 150
Datenblatt:
BSP52.pdf
PNP General Purpose Amplifier
Collector- Emitter Voltage VCEO Max: 100 V
Collector- Base Voltage VCBO: 110 V
Emitter- Base Voltage VEBO: 6 V
Collector-Emitter Saturation Voltage: 0.25 V
Maximum DC Collector Current: 0.2 A
Gain Bandwidth Product fT: 50 MHz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Continuous Collector Current: 0.2 A
DC Collector/Base Gain hFE Min: 30
Pd - Power Dissipation: 350 mW
Datenblatt:
BSS63.pdf
PNP Silicon Planar High Speed Transistor -12V / -100mA
Collector-Base Voltage VCBO -12 V
Collector-Emitter Voltage VCEO -12 V
Emitter-Base Voltage VEBO -4 V
Peak Pulse Current ICM -200 mA
Continuous Collector Current IC -100 mA
Base Current IC -50 mA
Power Dissipation at Tamb=25°C PTOT 330 mW
Operating and Storage Temperature Range tj:tstg -55 to +150 °C
Datenblatt:
BSS65.pdf