Zum Hauptinhalt springen Zur Suche springen Zur Hauptnavigation springen
Filter

BS....

Philips
BS170
N-Channel Vertical D-MOS Transistor ransistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 60 V Id - Continuous Drain Current: 500 mA Rds On - Drain-Source Resistance: 1.2 Ohms Vgs - Gate-Source Voltage: - 20 V, + 20 V Pd - Power Dissipation: 830 mW Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Datenblatt: BS170.pdf

Ab
0 .20*
Philips
BSH105
Beschreibung: N-Channel Vertical D-MOS Logic Level FET 20V / 1.05A / 0.25 Ohm Datenblatt: BSH105.pdf

0 .05*
Siemens
BSM121
Power Module Vds - Drain-Source Breakdown Voltage:: 200V Id - Continuous Drain Current: 130A Rds On - Drain-Source Resistance: 20mOhm Ptot - Power Dissipation: 700W Datenblatt: BSM121.pdf

60 .00*
Siemens
BSM25GB100D
IGBT Module 1000V / 2x35V / 300W - Half-bridge/Chopper - Including fast-wheel-diodes - Package with insulated metal base plate - Ordering Code: C67076-A2101-A2

55 .00*
Infineon
BSO304SN
Beschreibung: N-Channel MOSFET 30V / 6.4A / 0.03 Ohm Datenblatt: BSO304SN.pdf

Ab
0 .20*
NXP
BSP100
N-channel enhancement mode TrenchMOS Transistor - ’Trench’ technology - VDSS = 30 V - Low on-state resistance Rds

Ab
0 .51*
Philips
BSP20
NPN High-Voltage Transistor 300V / 100mA - Low current (max. 100 mA) - High voltage (max. 350 V) - Switching and amplification - Especially used in telephony and automotive applications Datenblatt: BSP20.pdf

Ab
0 .08*
Philips
BSP225
P-Channel Vertical D-MOS Intermediate Level FET 250V / 225mA / 15 Ohm Number of Channels: 1 Channel Transistor Polarity: P-Channel Vds - Drain-Source Breakdown Voltage: 250 V Id - Continuous Drain Current: 225 mA Rds On - Drain-Source Resistance: 15 Ohms Vgs - Gate-Source Voltage: 20 V Minimum Operating Temperature: - 65 C Maximum Operating Temperature: + 150 C Configuration: Single Dual Drain Pd - Power Dissipation: 1.5 W Datenblatt: BSP225.pdf

Ab
0 .15*
Siemens
BSP315
P-Channel SPMOS Small-Signal Transistor -50V/ -1.1A / 0.8 Ohm - P channel - Enhancement mode - Logic Level - VGS(th) = -0.8...-2.0 V Datenblatt: BSP315.pdf

Ab
0 .15*
Infineon
BSP315P
SIPMOS(R) Small-Signal-Transistor Transistor Polarity: P-Channel Vds - Drain-Source Breakdown Voltage: - 60 V Id - Continuous Drain Current: - 1.17 A Rds On - Drain-Source Resistance: 500 mOhms Vgs th - Gate-Source Threshold Voltage: - 2 V Vgs - Gate-Source Voltage: 20 V Qg - Gate Charge: 7.8 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Datenblatt: BSP315P.pdf

Ab
0 .34*
Siemens
BSP318
SMD N-Channel MOSFET Number of Channels: 1 Channel Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Id - Continuous Drain Current: 2.6 A Rds On - Drain-Source Resistance: 90 mOhms Vgs - Gate-Source Voltage: 20 V Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Configuration: Single Dual Drain Pd - Power Dissipation: 1.8 W Datenblatt: BSP318.pdf

Ab
0 .23*
Philips
BSP33
Beschreibung: PNP Medium Power Transistor -80V / -1A / 1.3W Datenblatt: BSP33.pdf

Ab
0 .10*
Infineon
BSP350
MiniPROFET 50V / 70mA / 1.7W - High-side switch - Short-circuit protection - Overtemperature protection with hysteresis - Overload protection - Overvoltage protection - Reverse battery protection - Switching inductive load - Clamp of negative output voltage with inductive loads - Maximum current internally limited Datenblatt: BSP350.pdf

Ab
0 .30*
Infineon
BSP52
NPN Silicon Darlington Transistors Configuration: Single Dual Collector Transistor Polarity: NPN Collector- Emitter Voltage VCEO Max: 80 V Emitter- Base Voltage VEBO: 5 V Collector- Base Voltage VCBO: 90 V Maximum DC Collector Current: 1 A Peak collector current, tp ? 10 ms ICM: 2A Base current IB: 100mA Total power dissipation-TS ? 124 °C Ptot: 1.5 W Maximum Operating Temperature: + 150 C Storage temperature Tstg: -65 ... 150 Datenblatt: BSP52.pdf

Ab
0 .10*
Siemens
BSP92
Beschreibung: P-Channel SIPMOS ® Small-Signal Transistor -240V / -0.2A / 20 Ohm Datenblatt: BSP92.pdf

Ab
0 .15*
Philips
BSR20A
Beschreibung: PNP High Voltage Transistor -150V / -600mA / 250mW Datenblatt: BSR20A.pdf

Ab
0 .04*
Philips
BSS100 PHILIPS
N-Channel SPMOS Small-Signal Transistor 100V/ 0,22A / 6,0 Ohm Datenblatt: BSS100.pdf

Ab
1 .00*
Siemens
BSS110
P-Channel Small-Signal Transistor Transistor Polarity: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: -50 V Id - Continuous Drain Current: 170 mA Rds On - Drain-Source Resistance: 10 Ohms Vgs - Gate-Source Voltage: - 20 V, + 20 V Pd - Power Dissipation: 630 mWC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Datenblatt: BSS110.pdf

Ab
1 .00*
Philips
BSS123
Beschreibung: N-channel TrenchMOS Transistor Logic level FET 100V / 150mA / 6 Ohm Datenblatt: BSS123.pdf

0 .12*
Siemens
BSS129B
Beschreibung: N-Channel SPMOS Small-Signal Transistor 240V/ 0,15A / 7,0 Ohm Datenblatt: BSS129.pdf

2 .00*
Infineon
BSS138N H6327
N-Channel SPMOS Small-Signal Transistor 60V/ 0,23A / 3.5 Ohm Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 60 V Id - Continuous Drain Current: 230 mA Rds On - Drain-Source Resistance: 2.2 Ohms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 1 V Qg - Gate Charge: 1 nC Pd - Power Dissipation: 360 mW Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Datenblatt: BSS138.pdf

Ab
1 .05*
Infineon
BSS192
Beschreibung: P-Channel SPMOS Small-Signal Transistor -240V/ -0,15A / 20 Ohm Datenblatt: BSS192.pdf

Ab
0 .10*
Fairchild
BSS63
PNP General Purpose Amplifier Collector- Emitter Voltage VCEO Max: 100 V Collector- Base Voltage VCBO: 110 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter Saturation Voltage: 0.25 V Maximum DC Collector Current: 0.2 A Gain Bandwidth Product fT: 50 MHz Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Continuous Collector Current: 0.2 A DC Collector/Base Gain hFE Min: 30 Pd - Power Dissipation: 350 mW Datenblatt: BSS63.pdf

Ab
0 .04*
Zetex Semiconductor
BSS65
PNP Silicon Planar High Speed Transistor -12V / -100mA Collector-Base Voltage VCBO -12 V Collector-Emitter Voltage VCEO -12 V Emitter-Base Voltage VEBO -4 V Peak Pulse Current ICM -200 mA Continuous Collector Current IC -100 mA Base Current IC -50 mA Power Dissipation at Tamb=25°C PTOT 330 mW Operating and Storage Temperature Range tj:tstg -55 to +150 °C Datenblatt: BSS65.pdf

Ab
0 .05*
NXP
BSS84AKW
Beschreibung: P-Channel Power MOSFET 50V / 150 mA / 4.5Ohm Datenblatt: BSS84AKW.pdf

Ab
0 .05*
ON-Semiconductor
BSS84L
P-Channel Power MOSFET 50 V, 130 mA Transistor Polarity: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 50 V Id - Continuous Drain Current: 130 mA Rds On - Drain-Source Resistance: 10 Ohms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 2 V Qg - Gate Charge: 2.2 nC Pd - Power Dissipation: 225 mW Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Datenblatt: BSS84L.pdf

Ab
0 .06*
Infineon
BSS84P
MOSFET P-CH 60V 0.17A Automotive Transistor Polarity: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 60 V Id - Continuous Drain Current: 170 mA Rds On - Drain-Source Resistance: 5.8 Ohms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 2 V Qg - Gate Charge: 1 nC Pd - Power Dissipation: 360 mW Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Datenblatt: BSS84P.pdf

Ab
0 .04*
Philips
BSS87
Beschreibung: N-Channel Enhancement Mode Vertical D-MOS Transistor 200V / 400mA Datenblatt: BSS87.pdf

0 .10*
Siemens
BSS89
N-Channel SPMOS Small-Signal Transistor 240V/ 0,30A / 6,0 Ohm Drain source voltage VDS: 240 V Gate source voltage VGS: +- 20V Continuous drain current Id: 0.3A Power dissipation Ptot: 1W Drain-Source on-state resistance Rdson: 6 Ohm Chip or operating temperature:-55 C - +150 C - cut tape a 40 pcs. Datenblatt: BSS89.pdf

Ab
1 .12*
Telefunken
BSX46/6
Beschreibung: NPN Medium Power Transistor 100V / 1.5A / 6.25W Datenblatt: BSX46.pdf

0 .50*