BF...

Siemens

BF550

PNP Medium Frequency Transistor -40V / -25mA Datenblatt: BF550.pdf

€ 0 .01*

Siemens

BF599

NPN Silicon RF Transistor 25V / 25mA Collector-emitter voltage VCE0: 25V Collector-base voltage VCB0: 40V Emitter-base voltage VEB0: 4V Collector current IC: 25mA Base current IB: 5mA Total power dissipation, TA £ 25 °C Ptot: 280 mW Junction temperature Tj: 150 °C Transition frequency ft: 550MHz Datenblatt: BF599.pdf

€ 0 .20*

Infineon

BFG196

NPN Silicon RF Transistor - Kollektor-Emitterspannung VCEO max.: 12 V - Kollektor-Basisspannung VCBO: 20 V - Emitter-Basisspannung VEBO: 2 V - Maximaler Kollektorgleichstrom (DC): 0.15 A - Bandbreitengewinnungsprodukt fT: 7500 MHz - Maximale Betriebstemperatur: + 150 C - For low noise, low distortion broadband amplifiers in antenna and telecommunication systems up to 1.5 GHz at collector currents from 20 mA to 80 mA - Power amplifier for DECT and PCN Systems - fT = 7.5 GHz F = 1.5 dB at 900 GHz Datenblatt: BFG196.pdf

€ 0 .33*

Philips

BFG31

Beschreibung: PNP 5 GHz Wideband Transistor -15V / -100mA Datenblatt: BFG31.pdf

€ 0 .15*

Siemens

BFN36

Beschreibung: NPN Silicon High-Voltage Transistor 250V / 200mA Datenblatt: BFN36.pdf

€ 0 .30*

Infineon

BFR380FH6327XTSA1

RF Bipolar Transistors Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 9V Frequency - Transition: 14GHz Noise Figure: 1.1dB to 1.6dB Gain: 9.5dB to 13.5dB Power - Max. 380mW DC Current Gai.: 90 at 40mA, 3V Current - Collector Ic: 80mA Operating Temperature TJ: 150C Datenblatt: BFR380F.pdf

€ 0 .07*

Infineon

BFS17W

Beschreibung: NPN Silicon RF Transistor Datenblatt: BFS17.pdf

€ 0 .04*