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Infineon

BCM856S

PNP Silicon AF Transistor Array 65V / 100mA / 250mW - Precision matched transistor pair: DeltaIC ? 10% - For current mirror applications - Low collector-emitter saturation voltage - Two (galvanic) internal isolated Transistors - Complementary type: BCM846S - Pb-free (RoHS compliant) package Datenblatt: BCM856S.pdf

€ 0 .05*

NXP

BCP53-16

PNP Medium Power Transistor -80V / -1A Collector- Emitter Voltage VCEO Max: -80 V Collector- Base Voltage VCBO: -100 V Emitter- Base Voltage VEBO: -5 V Maximum DC Collector Current: -1 A Gain Bandwidth Product fT: 145 MHz Pd - Power Dissipation: 1000 mW Minimum Operating Temperature: - 65 C Maximum Operating Temperature: + 150 C Datenblatt: BCP53.pdf

€ 0 .10*

Philips

BCP53-16

€ 0 .08*

Siemens

BCX41

Beschreibung: NPN Silicon AF and Switching Transistor 125V / 800mA Datenblatt: BCX41.pdf

Varianten ab 0,06 €*

€ 0 .10*

Infineon

BCX51-10

Beschreibung: PNP Silicon AF Transistor -45V / -1A Datenblatt: BCX51.pdf

€ 0 .10*

Infineon

BCX55

Beschreibung: NPN Silicon AF Transistor 60V / 1A / 2W Datenblatt: BCX55.pdf

€ 0 .10*

ST-Microelectronics

BD333

Beschreibung: PNP Silicon Power Transistor Datenblatt: BD333.pdf

€ 0 .15*

Philips

BD433

Beschreibung: NPN Transistor for Medium Power Linear and Switching Applications Datenblatt: BD433.pdf

€ 0 .12*

Philips

BD934

Beschreibung: PNP Power Transistor -45V / -3A / 30W Datenblatt: BD934.pdf

€ 1 .00*

Philips

BD948

Beschreibung: PNP Power Transistor -45V / -5A / 40W Datenblatt: BD948.pdf

€ 0 .35*

Motorola

BDW42

Beschreibung: Darlington Complementary Silicon Power Transistor Datenblatt: BDW42.pdf

€ 0 .60*

Philips

BDX68B

Beschreibung: PNP Darlington Transistors For Audio Output Stages And General Amplifier And Switching Applications -100V / -25A Datenblatt: BDX68.pdf

€ 4 .50*

Siemens

BF550

PNP Medium Frequency Transistor -40V / -25mA Datenblatt: BF550.pdf

€ 0 .01*

Siemens

BF599

NPN Silicon RF Transistor 25V / 25mA Collector-emitter voltage VCE0: 25V Collector-base voltage VCB0: 40V Emitter-base voltage VEB0: 4V Collector current IC: 25mA Base current IB: 5mA Total power dissipation, TA £ 25 °C Ptot: 280 mW Junction temperature Tj: 150 °C Transition frequency ft: 550MHz Datenblatt: BF599.pdf

€ 0 .20*

Infineon

BFG196

NPN Silicon RF Transistor - Kollektor-Emitterspannung VCEO max.: 12 V - Kollektor-Basisspannung VCBO: 20 V - Emitter-Basisspannung VEBO: 2 V - Maximaler Kollektorgleichstrom (DC): 0.15 A - Bandbreitengewinnungsprodukt fT: 7500 MHz - Maximale Betriebstemperatur: + 150 C - For low noise, low distortion broadband amplifiers in antenna and telecommunication systems up to 1.5 GHz at collector currents from 20 mA to 80 mA - Power amplifier for DECT and PCN Systems - fT = 7.5 GHz F = 1.5 dB at 900 GHz Datenblatt: BFG196.pdf

€ 0 .33*

Philips

BFG31

Beschreibung: PNP 5 GHz Wideband Transistor -15V / -100mA Datenblatt: BFG31.pdf

€ 0 .15*

Siemens

BFN36

Beschreibung: NPN Silicon High-Voltage Transistor 250V / 200mA Datenblatt: BFN36.pdf

€ 0 .30*

Infineon

BFR380FH6327XTSA1

RF Bipolar Transistors Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 9V Frequency - Transition: 14GHz Noise Figure: 1.1dB to 1.6dB Gain: 9.5dB to 13.5dB Power - Max. 380mW DC Current Gai.: 90 at 40mA, 3V Current - Collector Ic: 80mA Operating Temperature TJ: 150C Datenblatt: BFR380F.pdf

€ 0 .07*

Infineon

BFS17W

Beschreibung: NPN Silicon RF Transistor Datenblatt: BFS17.pdf

€ 0 .04*

Philips

BS170

N-Channel Vertical D-MOS Transistor ransistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 60 V Id - Continuous Drain Current: 500 mA Rds On - Drain-Source Resistance: 1.2 Ohms Vgs - Gate-Source Voltage: - 20 V, + 20 V Pd - Power Dissipation: 830 mW Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Datenblatt: BS170.pdf

€ 0 .20*

Philips

BSH105

Beschreibung: N-Channel Vertical D-MOS Logic Level FET 20V / 1.05A / 0.25 Ohm Datenblatt: BSH105.pdf

€ 0 .05*

Siemens

BSM121

Power Module Vds - Drain-Source Breakdown Voltage:: 200V Id - Continuous Drain Current: 130A Rds On - Drain-Source Resistance: 20mOhm Ptot - Power Dissipation: 700W Datenblatt: BSM121.pdf

€ 60 .00*

Siemens

BSM25GB100D

IGBT Module 1000V / 2x35V / 300W - Half-bridge/Chopper - Including fast-wheel-diodes - Package with insulated metal base plate - Ordering Code: C67076-A2101-A2

€ 55 .00*

Infineon

BSO304SN

Beschreibung: N-Channel MOSFET 30V / 6.4A / 0.03 Ohm Datenblatt: BSO304SN.pdf

€ 0 .20*

NXP

BSP100

N-channel enhancement mode TrenchMOS Transistor - ’Trench’ technology - VDSS = 30 V - Low on-state resistance Rds

€ 0 .51*

Philips

BSP20

NPN High-Voltage Transistor 300V / 100mA - Low current (max. 100 mA) - High voltage (max. 350 V) - Switching and amplification - Especially used in telephony and automotive applications Datenblatt: BSP20.pdf

€ 0 .08*

Philips

BSP225

P-Channel Vertical D-MOS Intermediate Level FET 250V / 225mA / 15 Ohm Number of Channels: 1 Channel Transistor Polarity: P-Channel Vds - Drain-Source Breakdown Voltage: 250 V Id - Continuous Drain Current: 225 mA Rds On - Drain-Source Resistance: 15 Ohms Vgs - Gate-Source Voltage: 20 V Minimum Operating Temperature: - 65 C Maximum Operating Temperature: + 150 C Configuration: Single Dual Drain Pd - Power Dissipation: 1.5 W Datenblatt: BSP225.pdf

€ 0 .15*

Siemens

BSP315

P-Channel SPMOS Small-Signal Transistor -50V/ -1.1A / 0.8 Ohm - P channel - Enhancement mode - Logic Level - VGS(th) = -0.8...-2.0 V Datenblatt: BSP315.pdf

€ 0 .15*

Infineon

BSP315P

SIPMOS(R) Small-Signal-Transistor Transistor Polarity: P-Channel Vds - Drain-Source Breakdown Voltage: - 60 V Id - Continuous Drain Current: - 1.17 A Rds On - Drain-Source Resistance: 500 mOhms Vgs th - Gate-Source Threshold Voltage: - 2 V Vgs - Gate-Source Voltage: 20 V Qg - Gate Charge: 7.8 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Datenblatt: BSP315P.pdf

€ 0 .34*

Siemens

BSP318

SMD N-Channel MOSFET Number of Channels: 1 Channel Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 60 V Id - Continuous Drain Current: 2.6 A Rds On - Drain-Source Resistance: 90 mOhms Vgs - Gate-Source Voltage: 20 V Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Configuration: Single Dual Drain Pd - Power Dissipation: 1.8 W Datenblatt: BSP318.pdf

€ 0 .23*

Philips

BSP33

Beschreibung: PNP Medium Power Transistor -80V / -1A / 1.3W Datenblatt: BSP33.pdf

€ 0 .10*

Infineon

BSP350

MiniPROFET 50V / 70mA / 1.7W - High-side switch - Short-circuit protection - Overtemperature protection with hysteresis - Overload protection - Overvoltage protection - Reverse battery protection - Switching inductive load - Clamp of negative output voltage with inductive loads - Maximum current internally limited Datenblatt: BSP350.pdf

€ 0 .30*

Infineon

BSP52

NPN Silicon Darlington Transistors Configuration: Single Dual Collector Transistor Polarity: NPN Collector- Emitter Voltage VCEO Max: 80 V Emitter- Base Voltage VEBO: 5 V Collector- Base Voltage VCBO: 90 V Maximum DC Collector Current: 1 A Peak collector current, tp ? 10 ms ICM: 2A Base current IB: 100mA Total power dissipation-TS ? 124 °C Ptot: 1.5 W Maximum Operating Temperature: + 150 C Storage temperature Tstg: -65 ... 150 Datenblatt: BSP52.pdf

€ 0 .10*

Siemens

BSP92

Beschreibung: P-Channel SIPMOS ® Small-Signal Transistor -240V / -0.2A / 20 Ohm Datenblatt: BSP92.pdf

€ 0 .15*

Philips

BSR20A

Beschreibung: PNP High Voltage Transistor -150V / -600mA / 250mW Datenblatt: BSR20A.pdf

€ 0 .04*

Philips

BSS100 PHILIPS

N-Channel SPMOS Small-Signal Transistor 100V/ 0,22A / 6,0 Ohm Datenblatt: BSS100.pdf

€ 1 .00*

Siemens

BSS110

P-Channel Small-Signal Transistor Transistor Polarity: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: -50 V Id - Continuous Drain Current: 170 mA Rds On - Drain-Source Resistance: 10 Ohms Vgs - Gate-Source Voltage: - 20 V, + 20 V Pd - Power Dissipation: 630 mWC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Datenblatt: BSS110.pdf

€ 1 .00*

Philips

BSS123

Beschreibung: N-channel TrenchMOS Transistor Logic level FET 100V / 150mA / 6 Ohm Datenblatt: BSS123.pdf

€ 0 .12*

Siemens

BSS129B

Beschreibung: N-Channel SPMOS Small-Signal Transistor 240V/ 0,15A / 7,0 Ohm Datenblatt: BSS129.pdf

€ 2 .00*

Infineon

BSS138N H6327

N-Channel SPMOS Small-Signal Transistor 60V/ 0,23A / 3.5 Ohm Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 60 V Id - Continuous Drain Current: 230 mA Rds On - Drain-Source Resistance: 2.2 Ohms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 1 V Qg - Gate Charge: 1 nC Pd - Power Dissipation: 360 mW Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Datenblatt: BSS138.pdf

€ 1 .05*