3N...
Genaral Instrument
3N187
Silicon Dual Insulated-Gate Field Effect Transistor
- Back-to-back diodes each gate against handling and in-circuit transients
- High forward transconductance -gfs=12,000umho (typ)
- High unneutralized RF power gain -Gps=18db (typ) at 200MHz
- Low VHF noise figure -3,5dB (typ) at 200MHz
Datenblatt:
3N187.pdf
€
14
.00*