Beschreibung: Silicon N Channel MOS Type For High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications
Datenblatt:
2SK1118.pdf
Silicon N Channel MOSFET For High-Power Amplifier Application
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 200 V
Id - Continuous Drain Current: 12 A
Vgs - Gate-Source Voltage: 20 V
Fall Time: 60 ns
Rise Time: 25 ns
Pd - Power Dissipation: 150 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Datenblatt:
2SK1530.pdf
N-Channel MOSFET for high speed high current applications, DC-DC converter, motor drive applications
- Vdss = 900 V
- Id = 5,00 A
- Pmax = 125,0 W
- Rdson = 1,900 Ohm
Datenblatt:
2SK2039.pdf