2SD...
NEC
2SD1018
Silicon NPN Power Transistor
- Material of transistor: Si
- Polarity: NPN
- Maximum collector power dissipation (Pc), W: 80
- Maximum collector-base voltage |Ucb|: 250V
- Maximum emitter-base voltage |Ueb|: 5V
- Maximum collector current |Ic max|: 4A
- Maximum junction temperature (Tj): 150°C
- Forward current transfer ratio (hFE), min: 40
€
2
.00*
Shindengen Inc.
2SD1027
Beschreibung: NPN Power Darlington Transistor 200V / 7A / 100W
Datenblatt:
2SD1027.pdf
€
3
.00*
Hitachi
2SD1138C
Silicon NPN Triple Diffused
Low frequency high voltage power amplifier TV vertical deflection output complementary pair with
2SB861
Collector to base voltage VCBO: 200 V
Collector to emitter voltage VCEO: 150 V
Emitter to base voltage VEBO: 6 V
Collector current IC: 2 A
Collector peak current IC (peak): 5 A
Collector power dissipation PC: 1.8 W
Junction temperature Tj: 150 °C
Storage temperature Tstg: –45 to +150 °C
Datenblatt:
2SC4686A.pdf
€
1
.25*
Hitachi
2SD2107W
Beschreibung: Silicon NPN Triple Diffused Transistor 60V / 4A / 25W
hFE1 Gruppe: C
Datenblatt:
2SD2107.pdf
€
0
.90*